- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359057 > M36W108AT (意法半導體) RECTIFIER SCHOTTKY SINGLE 3A 20V 125A-Ifsm 0.5Vf 0.5A-IR SMC 3K/REEL PDF資料下載
參數(shù)資料
| 型號： | M36W108AT |
| 廠商： | 意法半導體 |
| 英文描述： | RECTIFIER SCHOTTKY SINGLE 3A 20V 125A-Ifsm 0.5Vf 0.5A-IR SMC 3K/REEL |
| 中文描述： | 8兆1兆× 8，啟動塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲產(chǎn)品 |
| 文件頁數(shù)： | 15/35頁 |
| 文件大?。?/td> | 247K |
| 代理商： | M36W108AT |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
15/35
M36W108T, M36W108B
Table 14. DC Characteristics
(T
A
= 0 to 70°C, –20 to 85°C, –40 to 85°C; V
CCF
= V
CCS
= 2.7V to 3.6V)
Symbol
Parameter
Note: 1. Sampled only, not 100% tested.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CCF
/ V
CCS
–1
1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CCF
/ V
CCS
–1
1
μA
I
CCF1
Flash Chip Supply Current (Read)
EF = V
IL
, G = V
IH
, f = 6MHz,
V
≤
V
OUT
≤
V
CCF
10
mA
I
CCF2 (1)
Flash Chip Supply Current (Write)
Program or Erase in progress
20
μA
I
CCF3
Flash Chip Supply Current (Stand-by)
EF = V
CCF
± 0.2V
100
μA
I
CCS1
SRAM Chip Supply Current (Read)
E1S = V
IL
, E2S = V
IH
, f= 10MHz
40
mA
E1S = V
IL
, E2S = V
IH
, f= 1MHz
10
mA
I
CCS2 (1)
SRAM Chip Supply Current (Write)
20
mA
I
CCS3
SRAM Chip Supply Current (Stand-by)
20
μA
V
ILF
Flash Chip Input Low Voltage
–0.5
0.8
V
V
IHF
Flash Chip Input High Voltage
0.7 V
CCF
V
CCF
+ 0.3
V
V
ILS
SRAM Chip Input Low Voltage
–0.3
0.4
V
V
IHS
SRAM Chip Input High Voltage
2.2
V
CCS
+ 0.3
V
V
OLF
Flash Chip Output Low Voltage
I
OL
= 1.8mA
0.45
V
V
OHF
Flash Chip Output High Voltage
I
OH
= –100μA
V
CCF
– 0.4
V
V
OLS
SRAM Chip Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OHS
SRAM Chip Output High Voltage
I
OH
= –1.0mA
2.2
V
Table 15. Capacitance
(1)
(T
A
= 25 °C, f = 1 MHz)
Symbol
Note: 1. Sampled only, not 100% tested.
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
Figure 5. AC Testing Load Circuit
AI01968
0.8V
OUT
CL = 30pF or 100pF
CL includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Table 16. AC Measurement Conditions
Input Rise and Fall Times
≤
10ns
Input Pulse Voltages
0 to 3V
Input and Output Timing Ref. Voltages
1.5V
Figure 4. AC Testing Input/Output Waveforms
AI01417
3V
0V
1.5V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W108B | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT100ZN6T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB100ZN6T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZN6T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W108AT100ZM1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT100ZM5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT100ZM6T | 制造商:STMicroelectronics 功能描述:MIXED MEMORY, FLASH+SRAM, 48 Pin, Plastic, BGA |
| M36W108AT100ZN1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT100ZN5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
發(fā)布緊急采購，3分鐘左右您將得到回復。