參數(shù)資料
型號: M36W108B120ZN1T
廠商: 意法半導體
英文描述: 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
中文描述: 8兆1兆× 8,啟動塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲產品
文件頁數(shù): 30/35頁
文件大?。?/td> 247K
代理商: M36W108B120ZN1T
M36W108T, M36W108B
30/35
Table 23. SRAM Low V
CC
Data Retention Characteristics
(1, 2)
(T
A
= 0 to 70 °C; V
CCS
= 2.7 V to 3.6 V)
Symbol
Parameter
Note: 1. All other Inputs V
IH
V
CC
– 0.2V or V
IL
0.2V.
2. Sampled only. Not 100% tested.
Test Condition
Min
Max
Unit
I
CCDR
Supply Current (Data Retention)
V
CCS
= 3V, E1S
V
CCS
– 0.2V,
E2S
V
CCS
– 0.2V or E2S
0.2V, f = 0
20
μA
V
DR
Supply Voltage (Data Retention)
E1S
V
CCS
– 0.2V,E2S
0.2V, f = 0
2
3.6
V
t
CDR
Chip Disable to Power Down
E1S
V
CCS
– 0.2V,E2S
0.2V, f = 0
0
ns
t
R
Operation Recovery Time
5
ms
Figure 20. SRAM Low V
CC
Data Retention AC Waveforms, E1S Controlled
AI02438
2.7 V
E1S
tCDR
E1S
VCCS – 0.2V
2.2 V
VDR
VSS
VCCS
tR
DATA RETENTION MODE
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