參數資料
型號: M36W108B120ZN6T
廠商: 意法半導體
英文描述: 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
中文描述: 8兆1兆× 8,啟動塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲產品
文件頁數: 13/35頁
文件大小: 247K
代理商: M36W108B120ZN6T
13/35
M36W108T, M36W108B
Table 12. Flash Program/Erase Times and Endurance
(T
A
= 0 to 70 °C; V
CC
= 2.7 V to 3.6 V)
Parameter
Flash Memory Chip
Unit
Min
Typ
Typical after
100k W/E Cycles
Max
Chip Erase (Preprogrammed)
5
3.3
sec
Chip Erase
12
sec
Boot Block Erase
2.4
sec
Parameter Block Erase
2.3
sec
Main Block (32Kb) Erase
2.7
sec
Main Block (64Kb) Erase
3.3
15
sec
Chip Program (Byte)
8
8
sec
Byte Program
10
10
μs
Program/Erase Cycles (per Block)
100,000
cycles
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M36W108BZM 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
M36W108BZN 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
M36W108T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
M36W108T100ZM1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
M36W108T100ZM5T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product