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參數(shù)資料
| 型號(hào)： | M36W108T120ZM5T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| 中文描述： | 8兆1兆× 8，啟動(dòng)塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲(chǔ)產(chǎn)品 |
| 文件頁數(shù)： | 2/35頁 |
| 文件大?。?/td> | 247K |
| 代理商： | M36W108T120ZM5T |
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M36W108T, M36W108B
2/35
DESCRIPTION
The M36W108 is multi-chip device containing an
8 Mbit boot block Flash memory and a 1 Mbit of
SRAM. The device is offered in the new Chip
Scale Package solutions: LBGA48 1.0 mm ball
pitch and LGA48 1.0 mm land pitch.
The two components, of the package’s overall 9
Mbit of memory, are distinguishable by use of the
three chip enable lines: EF for the Flash memory,
E1S and E2S for the SRAM.
The Flash memory component is identical with the
M29W008 device. It is a non-volatile memory that
may be erased electrically at the block or chip level
and programmed in-system on a Byte-by-Byte ba-
sis using only a single 2.7V to 3.6V V
CCF
supply.
For Program and Erase operations the necessary
high voltages are generated internally. The device
can also be programmed in standard program-
mers. The array matrix organization allows each
block to be erased and reprogrammed without af-
fecting other blocks.
Instructions for Read/Reset, Auto Select for read-
ing the Electronic Signature, Programming, Block
Figure 2. LBGA and LGA Connections (Top View)
C
B
A
6
5
4
3
2
1
E
D
F
G
A11
A14
A1
NC
EF
VSS
A2
A3
DQ3
NC
NC
A4
A7
VCCF
NC
A0
VSS
A8
A18
VCCS
DQ1
DQ2
DQ4
A5
NC
W
DQ7
DQ5
A19
NC
A6
DQ0
A10
E1S
AI02508
G
H
E2S
RB
A13
DQ6
NC
A9
A15
A12
NC
A16
NC
RP
A17
Table 1. Signal Names
A0-A16
Address Inputs
A17-A19
Address Inputs for Flash Chip
DQ0-DQ7
Data Input/Outputs, Command Inputs
for Flash Chip
EF
Chip Enable for Flash Chip
E1S, E2S
Chip Enable for SRAM Chip
G
Output Enable
W
Write Enable
RP
Reset for Flash Chip
RB
Ready/Busy Output for Flash Chip
V
CCF
Supply Voltage for Flash Chip
V
CCS
Supply Voltage for SRAM Chip
V
SS
Ground
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W108B120ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT100ZM6T | Low-Smoke Zero-Halogen (LSZH) Shipboard Precision Low-Loss Serial Analog & Digital Video Coax Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid RoHS Compliant: Yes |
| M36W108AB100ZM6T | Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| M36W108AT120ZM6T | Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| M36W108AB120ZM6T | Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W108T120ZM6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T120ZN1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T120ZN5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T120ZN6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108TZM | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
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