參數(shù)資料
型號(hào)： M36WT864B85ZA6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述： 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多
文件頁(yè)數(shù)： 13/92頁(yè)
文件大?。?/td> 624K
代理商： M36WT864B85ZA6T
13/92
M36WT864TF, M36WT864BF
Flash Memory Component
The Flash memory is a 64 Mbit (4Mbit x16) non-
volatile Flash memory that may be erased electri-
cally at block level and programmed in-system on
a Word-by-Word basis using a 1.65V to 2.2V V
DD
supply for the circuitry and a 1.65V to 3.3V V
DDQ
supply for the Input/Output pins. An optional 12V
V
PPF
power supply is provided to speed up cus-
tomer programming.
The device features an asymmetrical block archi-
tecture with an array of 135 blocks divided into 4
Mbit banks. There are 15 banks each containing 8
main blocks of 32 KWords, and one parameter
bank containing 8 parameter blocks of 4 KWords
and 7 main blocks of 32 KWords. The Multiple
Bank Architecture allows Dual Operations, while
programming or erasing in one bank, Read opera-
tions are possible in other banks. Only one bank at
a time is allowed to be in Program or Erase mode.
It is possible to perform burst reads that cross
bank boundaries. The bank architecture is sum-
marized in Table 3, and the memory maps are
shown in Figure 5. The Parameter Blocks are lo-
cated at the top of the memory address space for
the M36WT864TF, and at the bottom for the
M36WT864BF.
Each block can be erased separately. Erase can
be suspended, in order to perform program in any
other block, and then resumed. Program can be
suspended to read data in any other block and
then resumed. Each block can be programmed
and erased over 100,000 cycles using the supply
voltage V
DD
. There are two Enhanced Factory
programming commands available to speed up
programming.
Program and Erase commands are written to the
Command Interface of the memory. An internal
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified in the
Status Register. The command set required to
control the memory is consistent with JEDEC stan-
dards.
The device supports synchronous burst read and
asynchronous read from all blocks of the memory
array; at power-up the device is configured for
asynchronous read. In synchronous burst mode,
data is output on each clock cycle at frequencies
of up to 54MHz.
The device features an Automatic Standby mode.
During asynchronous read operations, after a bus
inactivity of 150ns, the device automatically
switches to the Automatic Standby mode. In this
condition the power consumption is reduced to the
standby value I
DD4
and the outputs are still driven.
The Flash memory features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and erase.
When V
PPF
≤
V
PPLK
all blocks are protected
against program or erase. All blocks are locked at
Power- Up.
The device includes a Protection Register and a
Security Block to increase the protection of a sys-
tem’s design. The Protection Register is divided
into two segments: a 64 bit segment containing a
unique device number written by ST, and a 128 bit
segment One-Time-Programmable (OTP) by the
user. The user programmable segment can be
permanently protected. The Security Block, pa-
rameter block 0, can be permanently protected by
the user. Figure 6, shows the Security Block and
Protection Register Memory Map.
SRAM Component
The SRAM is an 8 Mbit (512Kb x16) asynchronous
random access memory which features a super
low voltage operation and low current consump-
tion with an access time of 70ns. The memory op-
erations can be performed using a single low
voltage supply, 2.7V to 3.3V.
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M36WT864T70ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TFZA 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864BFZA 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36WT864BF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864BFZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T70ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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