Rev.1.00
Aug 06, 2008
page 62 of 64
REJ03B0251-0100
4286 Group
Unit
V
mA
MHz
V
ms
s
Symbol
VDD
VRAM
VSS
VIH
VIL
IOH(peak)
IOL(peak)
IOH(avg)
IOL(avg)
f(XIN)
VDET
TDET
TPON
Conditions
Ta = 25 °C
Unit
V
mW
°C
Ratings
–0.3 to 5
–0.3 to VDD+0.3
300
–40 to 85
–65 to 125
Symbol
VDD
VI
VO
Pd
Topr
Tstg
RECOMMENDED OPERATING CONDITIONS
(Ta = –40 to 85 °C, VDD = 1.8 V to 3.6 V, unless otherwise noted)
Parameter
Supply voltage
RAM back-up voltage (at RAM back-up mode)
Supply voltage
“H” level input voltage Ports D, E, G
“H” level input voltage XIN
“L” level input voltage Ports D, E, G
“L” level input voltage XIN
“H” level peak output current Ports D, E1, G
“H” level peak output current Port E0
“H” level peak output current CARR
“L” level peak output current CARR
“H” level average output current Ports D, E1, G
“H” level average output current Port E0
“H” level average output current CARR
“L” level average output current CARR
clock frequency
Detection voltage
(before CLVD
instruction execution)
Detection voltage
(after CLVD
instruction execution)
Voltage drop detection circuit low voltage
determination time
Power-on reset circuit valid power source rising time
Limits
Max.
3.6
VDD
0.2VDD
–4
–24
–20
4
–2
–12
–10
2
4
2
Typ.
0
Min.
1.8
1.1
0.7VDD
0.8VDD
0
Note: The average output current ratings are the average current value during 100 ms.
Conditions
VDD = 3.0 V
Ceramic resonance
Ta = 25 °C
When supply voltage passes
the detected voltage at ±50V/s.
VDD = 0 → 2.2 V
Ta = –20 °C to 85 °C
VDD = 0 → 2.2 V
Ta = –40 °C to 85 °C
Reset occurrence
Reset release
Reset occurrence/
Reset release
1.1
1.4
1.2
1.6
1.2
1.6
1.5
1.7
0.2
1.9
1.56
2.2
1.76
2.2
1.76
1.2
1
100
when STCK = f(XIN)/8, f(XIN)/4, f(XIN)/2 selected
when STCK = f(XIN) selected
Parameter
Supply voltage
Input voltage
Output voltage
Power dissipation
Operating temperature range
Storage temperature range
ABSOLUTE MAXIMUM RATINGS