參數(shù)資料
型號(hào)： M38867E8AFS
廠商： Mitsubishi Electric Corporation
英文描述： SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
中文描述： 單芯片8位CMOS微機(jī)
文件頁(yè)數(shù)： 73/110頁(yè)
文件大小： 1601K
代理商： M38867E8AFS
73
3886 Group
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
Table 22 DC ELECTRICAL CHARACTERISTICS (T
a
= 25 °C, V
CC
= 5 V ± 10 %, unless otherwise noted)
Symbol
Max.
1
100
15
15
15
10
100
100
30
30
0.8
V
CC
0.45
V
CC
+ 1.0
12.6
V
CC
= 5.5 V, CE = V
IH
V
CC
= 5.5 V,
CE = V
CC
± 0.2 V
V
CC
= 5.5 V, CE = V
IL
,
t
RC
= 150 ns, I
OUT
= 0 mA
V
PP
= V
PP
H
V
PP
= V
PP
H
0
≤
V
PP
≤
V
CC
V
CC
<V
PP
≤
V
CC
+ 1.0 V
V
PP
= V
PP
H
V
PP
= V
PP
H
V
PP
= V
PP
H
I
OL
= 2.1 mA
I
OH
= –400
μ
A
I
OH
= –100
μ
A
I
SB1
I
SB2
I
CC1
I
CC2
I
CC3
I
PP1
I
PP2
I
PP3
V
IL
V
IH
V
OL
V
OH1
V
OH2
V
PP
L
V
PP
H
V
CC
supply current (at standby)
V
CC
supply current (at read)
V
CC
supply current (at program)
V
CC
supply current (at erase)
V
PP
supply current (at read)
V
PP
supply current (at program)
V
PP
supply current (at erase)
“L” input voltage
“H” input voltage
“L” output voltage
“H” output voltage
V
PP
supply voltage (read only)
V
PP
supply voltage (read/write)
Parameter
Test conditions
Typ.
Min.
Limits
mA
μ
A
mA
mA
mA
μ
A
μ
A
μ
A
mA
mA
V
V
V
V
V
V
V
Unit
0
2.0
2.4
V
CC
–0.4
V
CC
11.7
12.0
AC ELECTRICAL CHARACTERISTICS (T
a
= 25 °C, V
CC
= 5 V ± 10 %, unless otherwise noted)
Table 23 Read-only mode
Symbol
Max.
Parameter
Min.
250
Limits
Unit
t
RC
t
a(AD)
t
a(CE)
t
a(OE)
t
CLZ
t
OLZ
t
DF
t
DH
t
WRR
Read cycle time
Address access time
CE access time
OE access time
Output enable time (after CE)
Output enable time (after OE)
Output floating time (after OE)
Output valid time (after CE, OE, address)
Write recovery time (before read)
0
0
0
6
250
250
100
35
ns
ns
ns
ns
ns
ns
ns
ns
μ
s
Table 24 Read/Write mode
Symbol
Max.
Parameter
Min.
150
Limits
Unit
t
WC
t
AS
t
AH
t
DS
t
DH
t
WRR
t
RRW
t
CS
t
CH
t
WP
t
WPH
t
DP
t
DE
t
VSC
Write cycle time
Address set up time
Address hold time
Data setup time
Data hold time
Write recovery time (before read)
Read recovery time (before write)
CE setup time
CE hold time
Write pulse width
Write pulse waiting time
Program time
Erase time
V
PP
setup time
0
60
50
10
6
0
20
0
60
20
10
9.5
1
ns
ns
ns
ns
ns
μ
s
μ
s
ns
ns
ns
ns
μ
s
ms
μ
s
Note:
Read timing of Read/Write mode is same as Read-only mode.
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