參數(shù)資料
型號(hào): M38D24G6HP
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 6.25 MHz, MICROCONTROLLER, PQFP64
封裝: 10X 10 MM, 0.50 MM PITCH, PLASTIC, LQFP-64
文件頁數(shù): 60/136頁
文件大?。?/td> 2856K
代理商: M38D24G6HP
Rev.3.02
Apr 10, 2008
Page 3 of 131
REJ03B0177-0302
38D2 Group
NOTE:
1. 12.5 MHz < f(XIN)
≤ 16 MHz is not available in the frequency/2 mode.
Table 1
Performance overview
Parameter
Function
Number of basic instructions
71
Instruction execution time
0.32
μs (Minimum instruction, Oscillation frequency 12.5 MHz)
Oscillation frequency
Memory sizes
(QzROM version)
ROM
16 K to 60 K bytes
RAM
640 to 2048 bytes
Memory sizes
(Flash memory version)
ROM
60 K bytes
RAM
2048 bytes
I/O port
P0-P5, P60-P62
8-bit
× 6, 3-bit × 1 (24 pins sharing SEG)
Interrupt
18 sources, 16 vectors (includes key input interrupt)
Timer
8-bit
× 4, 16-bit × 2
Serial Interface
8-bit
× 2 (UART or Clock-synchronized)
PWM
10-bit
× 2, 16-bit × 1 (common to IGBT output)
A/D converter
10-bit
× 8 (operated in low-speed mode)
Watchdog timer
8-bit
× 1
ROM correction function
32 bytes
× 2 vectors
LED direct drive port
8 (average current: 15 mA, peak current: 30 mA, total current: 90 mA)
LCD drive control
circuit
Bias
1/2, 1/3
Duty
2, 3, 4
Common output
4
Segment output
24
Main clock generating circuits
Built-in (connect to external ceramic resonator or on-chip oscillator)
Sub-clock generating circuits
Built-in (connect to external quartz-crystal oscillator)
Power source voltage
(QzROM version)
In frequency/2 mode
f(XIN)
≤ 12.5 MHz 4.5 to 5.5 V
f(XIN)
≤ 8 MHz
4.0 to 5.5 V
f(XIN)
≤ 4 MHz
2.0 to 5.5 V
f(XIN)
≤ 2 MHz
1.8 to 5.5 V
In frequency/4 mode
f(XIN)
≤ 16 MHz
4.5 to 5.5 V
f(XIN)
≤ 8 MHz
2.0 to 5.5 V
f(XIN)
≤ 4 MHz
1.8 to 5.5 V
In frequency/8 mode
f(XIN)
≤ 16 MHz
4.5 to 5.5 V
f(XIN)
≤ 8 MHz
2.0 to 5.5 V
f(XIN)
≤ 4 MHz
1.8 to 5.5 V
In low-speed mode
1.8 to 5.5 V
Power source voltage
(Flash memory version)
In frequency/2 mode
f(XIN)
≤ 12.5 MHz 4.5 to 5.5 V
f(XIN)
≤ 8 MHz
4.0 to 5.5 V
f(XIN)
≤ 4 MHz
2.7 to 5.5 V
In frequency/4 mode
f(XIN)
≤ 16 MHz
4.5 to 5.5 V
f(XIN)
≤ 8 MHz
2.7 to 5.5 V
In frequency/8 mode
f(XIN)
≤ 16 MHz
4.5 to 5.5 V
f(XIN)
≤ 8 MHz
2.7 to 5.5 V
In low-speed mode
2.7 to 5.5 V
Power dissipation
(QzROM version)
In frequency/2 mode
Std. 32 mW (Vcc = 5 V, f(XIN) = 12.5 MHz, Ta = 25
°C)
In low-speed mode
Std. 18
μW (Vcc = 2.5 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25°C)
Power dissipation
(Flash memory version)
In frequency/2 mode
Std. 20 mW (Vcc = 5 V, f(XIN) = 12.5 MHz, Ta = 25
°C)
In low-speed mode
Std. 1.1 mW (Vcc = 2.7 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25
°C)
Input/Output
characteristics
Input/Output withstand voltage
VCC
Output current
10 mA
Operating temperature range
-20 to 85
°C
Device structure
CMOS silicon gate
Package
64-pin plastic molded LQFP
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