參數(shù)資料
型號(hào): M40Z300AVMH6F
廠商: 意法半導(dǎo)體
英文描述: 3V NVRAM Supervisor for Up to 8 LPSRAMs
中文描述: 3V的NVRAM中監(jiān)多達(dá)8個(gè)LPSRAMs
文件頁(yè)數(shù): 8/20頁(yè)
文件大?。?/td> 131K
代理商: M40Z300AVMH6F
M40Z300AV
8/20
V
CC
Noise And Negative Going Transients
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1μF (as shown in Figure
8
) is recommended in order to provide the needed
filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, STMicroelectronics recom-
mends connecting a schottky diode from V
CC
to
V
SS
(cathode connected to V
CC
, anode to V
SS
).
Schottky diode 1N5817 is recommended for
through hole and MBRS120T3 is recommended
for surface mount.
Figure 8. Supply Voltage Protection
AI00622
VCC
0.1
μ
F
DEVICE
VCC
VSS
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