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參數(shù)資料
| 型號(hào)： | M40Z300WMH6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs |
| 中文描述： | 5V或3V NVRAM中監(jiān)多達(dá)8個(gè)LPSRAMs |
| 文件頁數(shù)： | 14/21頁 |
| 文件大?。?/td> | 132K |
| 代理商： | M40Z300WMH6TR |
M40Z300, M40Z300W
14/21
Table 7. Power Down/Up Mode AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= 0 to 70°C or –40 to 85°C; V
CC
= 2.7 to 3.6V or 4.5 to 5.5V(except where noted).
2. V
PFD
(max) to V
PFD
(min) fall time of less than tF may result in deselection/write protection not occurring until 200 μs after V
CC
passes V
PFD
(min).
3. V
PFD
(min) to V
SS
fall time of less than t
FB
may cause corruption of RAM data.
4. t
REC
(min) = 20ms for industrial temperature Grade 6 device.
Symbol
Parameter
(1)
Min
Max
Unit
t
F(2)
V
PFD
(max) to V
PFD
(min) V
CC
Fall Time
300
μs
t
FB(3)
V
PFD
(min) to V
SS
V
CC
Fall Time
M40Z300
10
μs
M40Z300W
150
μs
t
R
V
PFD
(min) to V
PFD
(max) V
CC
Rise Time
10
μs
t
EDL
Chip Enable Propagation Delay Low
M40Z300
12
ns
M40Z300W
20
ns
t
EDH
Chip Enable Propagation Delay High
M40Z300
10
ns
M40Z300W
20
ns
t
AS
A, B set up to E
0
ns
t
CER
Chip Enable Recovery
40
120
ms
t
REC(4)
V
PFD
(max) to RST High
40
120
ms
t
WPT
Write Protect Time
M40Z300
40
150
μs
M40Z300W
40
250
μs
t
RB
V
SS
to V
PFD
(min) V
CC
Rise Time
1
μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M40Z300WMQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NVRAM CONTROLLER for up to EIGHT LPSRAM |
| M40Z300WMQ1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NVRAM CONTROLLER for up to EIGHT LPSRAM |
| M40Z300WMQ1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| M40Z300WMQ1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| M40Z300WMQ1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs |
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