參數(shù)資料
型號(hào): M464S1654ETS
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: SDRAM Unbuffered SODIMM
中文描述: 內(nèi)存緩沖的SODIMM
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 75K
代理商: M464S1654ETS
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
P
0
0
0.5
1.0
1.5
2.0
25
50
75
100
V
S
= 10V
V
I
= 2.4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Output Saturation Voltage
Output Current Characteristics
Output saturation voltage V
CE
(sat) (V)
0
0
–400
–300
–200
–100
–500
0.5
1.0
1.5
2.0
2.5
O
O
Duty-Cycle-Output Current Characteristics
–500
Duty cycle (%)
0
0
–400
–300
–200
–100
20
40
60
80
100
O
O
Input voltage V
I
(V)
0
0
–500
–400
–300
–200
–100
0.2
0.4
0.6
0.8
1.0
O
O
Duty cycle (%)
0
0
–500
–400
–300
–200
–100
20
40
60
80
100
O
O
Forward bias voltage V
F
(V)
0
0.5
1.0
1.5
0
500
400
300
200
100
2.0
F
F
Duty-Cycle-Output Current Characteristics
Grounded Emitter Transfer Characteristics
Clamping Diode Characteristics
V
S
= 20V
V
S
-V
= 4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Ta = 75°C
Ta = 25°C
Ta = –20°C
The output current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 25°C
The output current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 75°C
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