參數(shù)資料
型號(hào)： M470T3354CZ3-CE6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
中文描述： 內(nèi)存緩沖的SODIMM 200pin緩沖的SODIMM上的512Mb基于C模具64非ECC
文件頁(yè)數(shù)： 18/18頁(yè)
文件大?。?/td> 328K
代理商： M470T3354CZ3-CE6
Rev. 1.2 Aug. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Revision History
Revision 1.0 (Mar. 2005)
- Initial Release
Revision 1.1 (Mar. 2005)
- Changed IDD0/IDD3N/IDD3P current values.
- Added Lowpower current values.
Revision 1.2 (Aug. 2005)
- Changed the IDD Current Values.
相關(guān)PDF資料
PDF描述
M470T6554CZ3-CE6 DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T3354CZ3-CE7 DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T6554CZ3-CE7 DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T3354CZ3-CLCC DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T6554CZ3-CLCC DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M470T3354CZ3-CE7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T3354CZ3-CLCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T3354CZ3-CLD5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T3354CZ3-CLE6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T3354CZ3-CLE7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
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