參數(shù)資料
型號: M470T6554CZ3-CLCC
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
中文描述: 內(nèi)存緩沖的SODIMM 200pin緩沖的SODIMM上的512Mb基于C模具64非ECC
文件頁數(shù): 18/18頁
文件大小: 328K
代理商: M470T6554CZ3-CLCC
Rev. 1.2 Aug. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Revision History
Revision 1.0 (Mar. 2005)
- Initial Release
Revision 1.1 (Mar. 2005)
- Changed IDD0/IDD3N/IDD3P current values.
- Added Lowpower current values.
Revision 1.2 (Aug. 2005)
- Changed the IDD Current Values.
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M470T3354CZ3-CLD5 DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
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M470T6554CZ3-CLD5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T6554CZ3-CLE6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T6554CZ3-CLE7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
M470T6554EZ3-CE600 制造商:Samsung 功能描述:512 DDR SDRAM MODUL X64 BOC(LF) - Trays
M470T6554GZ3CE600 制造商:Samsung SDI 功能描述:9E