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參數(shù)資料
| 型號： | M48T35AV-10MH1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ER 3C 3#12 PIN PLUG |
| 中文描述： | 256千位的32KB的SRAM x8計(jì)時(shí)器 |
| 文件頁數(shù)： | 6/19頁 |
| 文件大?。?/td> | 148K |
| 代理商： | M48T35AV-10MH1 |
M48T35AY, M48T35AV
6/19
Table 5. Capacitance
(1, 2)
(T
A
= 25°C)
Symbol
Note: 1. Effective capacitance measured with power supply at 5V.
2. Sampled only, not 100% tested.
3. Outputs deselected.
Table 6A. DC Characteristics
(T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 4.5V to 5.5V)
Symbol
Parameter
Note: 1. Outputs deselected.
2.
Negative spikes of –1V allowed for up to 10ns once per Cycle.
Table 6B. DC Characteristics
(T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 3.0V to 3.6V)
Symbol
Parameter
Note: 1. Outputs deselected.
2.
Negative spikes of –1V allowed for up to 10ns once per Cycle.
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
10
pF
C
IO (3)
Input / Output Capacitance
V
OUT
= 0V
10
pF
Test Condition
Min
Max
Unit
I
LI
(1)
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
μA
I
LO
(1)
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±5
μA
I
CC
Supply Current
Outputs open
50
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
3
mA
I
CC2
Supply Current (Standby) CMOS
E = V
CC
– 0.2V
3
mA
V
IL
(2)
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2.2
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage
I
OH
= –1mA
2.4
V
Test Condition
Min
Max
Unit
I
LI
(1)
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
μA
I
LO
(1)
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±5
μA
I
CC
Supply Current
Outputs open
30
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
2
mA
I
CC2
Supply Current (Standby) CMOS
E = V
CC
– 0.2V
2
mA
V
IL
(2)
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2.2
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage
I
OH
= –1mA
2.4
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M48T35AV-10MH1E | 功能描述:NVRAM 256K (32Kx8) 100ns RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| M48T35AV-10MH1F | 功能描述:NVRAM 256K (32Kx8) 100ns RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| M48T35AV-10MH1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit 32Kb x8 TIMEKEEPER SRAM |
| M48T35AV-10MH6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit 32Kb x8 TIMEKEEPER SRAM |
| M48T35AV-10MH6E | 功能描述:NVRAM 256K (32Kx8) 100ns BULK RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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