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參數(shù)資料
| 型號： | M48T35AV-10MH6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 Kbit 32Kb x8 TIMEKEEPER SRAM |
| 中文描述： | 256千位的32KB的SRAM x8計時器 |
| 文件頁數(shù)： | 3/19頁 |
| 文件大?。?/td> | 148K |
| 代理商： | M48T35AV-10MH6TR |
3/19
M48T35AY, M48T35AV
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational section
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect
reliability.
2.
Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds).
CAUTION:
Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
Grade 1
0 to 70
°C
Grade 6
–40 to 85
°C
T
STG
Storage Temperature (V
CC
Off, Oscillator Off)
–40 to 85
°C
T
SLD (2)
Lead Solder Temperature for 10 seconds
260
°C
V
IO
Input or Output Voltages
M48T35AY
–0.3 to 7
V
M48T35AV
–0.3 to 4.6
V
V
CC
Supply Voltage
M48T35AY
–0.3 to 7
V
M48T35AV
–0.3 to 4.6
V
I
O
Output Current
20
mA
P
D
Power Dissipation
1
W
Table 3. Operating Modes
(1)
Note: 1. X = V
IH
or V
IL
; V
SO
= Battery Back-up Switchover Voltage.
2. See Table 7 for details.
Mode
V
CC
E
G
W
DQ0-DQ7
Power
Deselect
4.5V to 5.5V
or
3.0V to 3.6V
V
IH
X
X
High Z
Standby
Write
V
IL
X
V
IL
D
IN
Active
Read
V
IL
V
IL
V
IH
D
OUT
Active
Read
V
IL
V
IH
V
IH
High Z
Active
Deselect
V
SO
to V
PFD
(min)
(2)
X
X
X
High Z
CMOS Standby
Deselect
≤
V
SO
X
X
X
High Z
Battery Back-up Mode
The eight clock bytes are not the actual clock
counters themselves; they are memory locations
consisting of BiPORT read/write memory cells.
The M48T35AY/35AV includes a clock control cir-
cuit which updates the clock bytes with current in-
formation once per second. The information can
be accessed by the user in the same manner as
any other location in the static memory array.
The M48T35AY/35AV also has its own Power-fail
Detect circuit. The control circuitry constantly mon-
itors the single 5V supply for an out of tolerance
condition. When V
CC
is out of tolerance, the circuit
write protects the SRAM, providing a high degree
of data security in the midst of unpredictable sys-
tem operation brought on by low V
CC
. As V
CC
falls
below approximately 3V, the control circuitry con-
nects the battery which maintains data and clock
operation until valid power returns.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| M48T35AV-10PC1 | 功能描述:NVRAM 256K (32Kx8) 100ns RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| M48T35AV-10PC1 | 制造商:STMicroelectronics 功能描述:NVRAM Memory IC |
| M48T35AV-10PC1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER㈢ SRAM |
| M48T35AV-10PC1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER㈢ SRAM |
| M48T35AV-10PC1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER㈢ SRAM |
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