參數(shù)資料
型號: M48T35AV-70PC6TR
廠商: 意法半導(dǎo)體
英文描述: 256 Kbit 32Kb x8 TIMEKEEPER SRAM
中文描述: 256千位的32KB的SRAM x8計時器
文件頁數(shù): 7/19頁
文件大小: 148K
代理商: M48T35AV-70PC6TR
7/19
M48T35AY, M48T35AV
Table 7. Power Down/Up Trip Points DC Characteristics
(1)
(T
A
= 0 to 70 °C or –40 to 85 °C)
Symbol
Parameter
Note: 1. All voltages referenced to V
SS
.
2. CAPHAT and M4T32-BR12SH1 SNAPHAT only, M4T28-BR12SH1 SNAPHAT top t
DR
= 7 years (typ).
3. Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - grade 6 device).
Table 8. Power Down/Up AC Characteristics
(T
A
= 0 to 70 °C or –40 to 85 °C)
Symbol
Note: 1. V
PFD
(max) to V
PFD
(min) fall time of less than t
F
may result in deselection/write protection not occurring until 200μs after V
CC
pass-
es V
PFD
(min).
2. V
PFD
(min) to V
SS
fall time of less than t
FB
may cause corruption of RAM data.
3. t
REC
(min) = 20ms for industrial temperature grade 6 device.
Min
Typ
Max
Unit
V
PFD
Power-fail Deselect Voltage
M48T35AY
4.2
4.35
4.5
V
M48T35AV
2.7
2.9
3.0
V
V
SO
Battery Back-up Switchover Voltage
M48T35AY
3.0
V
M48T35AV
V
PFD
–100mV
V
t
DR
Expected Data Retention Time (at 25°C)
Grade 1
10
(2)
YEARS
Grade 6
10
(3)
YEARS
Parameter
Min
Max
Unit
t
PD
E or W at V
IH
before Power Down
0
μs
t
F
(1)
V
PFD
(max) to V
PFD
(min) V
CC
Fall Time
300
μs
t
FB
(2)
V
PFD
(min) to V
SS
V
CC
Fall Time
M48T35AY
10
μs
M48T35AV
150
μs
t
R
V
PFD
(min) to V
PFD
(max) V
CC
Rise Time
10
μs
t
RB
V
SS
to V
PFD
(min) V
CC
Rise Time
1
μs
t
REC
(3)
V
PFD
(max) to Inputs Recognized
40
200
ms
Figure 5. Power Down/Up Mode AC Waveforms
AI01168C
VCC
VPFD (max)
INPUTS
(PER CONTROL INPUT)
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
tPD
tRB
tDR
VALID
VALID
(PER CONTROL INPUT)
RECOGNIZED
RECOGNIZED
VPFD (min)
VSO
tREC
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