參數(shù)資料
型號: M48T35SH
廠商: 意法半導(dǎo)體
英文描述: 256 Kbit 32Kb x8 TIMEKEEPER SRAM
中文描述: 256千位的32KB的SRAM x8計時器
文件頁數(shù): 7/19頁
文件大?。?/td> 148K
代理商: M48T35SH
7/19
M48T35AY, M48T35AV
Table 7. Power Down/Up Trip Points DC Characteristics
(1)
(T
A
= 0 to 70 °C or –40 to 85 °C)
Symbol
Parameter
Note: 1. All voltages referenced to V
SS
.
2. CAPHAT and M4T32-BR12SH1 SNAPHAT only, M4T28-BR12SH1 SNAPHAT top t
DR
= 7 years (typ).
3. Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - grade 6 device).
Table 8. Power Down/Up AC Characteristics
(T
A
= 0 to 70 °C or –40 to 85 °C)
Symbol
Note: 1. V
PFD
(max) to V
PFD
(min) fall time of less than t
F
may result in deselection/write protection not occurring until 200μs after V
CC
pass-
es V
PFD
(min).
2. V
PFD
(min) to V
SS
fall time of less than t
FB
may cause corruption of RAM data.
3. t
REC
(min) = 20ms for industrial temperature grade 6 device.
Min
Typ
Max
Unit
V
PFD
Power-fail Deselect Voltage
M48T35AY
4.2
4.35
4.5
V
M48T35AV
2.7
2.9
3.0
V
V
SO
Battery Back-up Switchover Voltage
M48T35AY
3.0
V
M48T35AV
V
PFD
–100mV
V
t
DR
Expected Data Retention Time (at 25°C)
Grade 1
10
(2)
YEARS
Grade 6
10
(3)
YEARS
Parameter
Min
Max
Unit
t
PD
E or W at V
IH
before Power Down
0
μs
t
F
(1)
V
PFD
(max) to V
PFD
(min) V
CC
Fall Time
300
μs
t
FB
(2)
V
PFD
(min) to V
SS
V
CC
Fall Time
M48T35AY
10
μs
M48T35AV
150
μs
t
R
V
PFD
(min) to V
PFD
(max) V
CC
Rise Time
10
μs
t
RB
V
SS
to V
PFD
(min) V
CC
Rise Time
1
μs
t
REC
(3)
V
PFD
(max) to Inputs Recognized
40
200
ms
Figure 5. Power Down/Up Mode AC Waveforms
AI01168C
VCC
VPFD (max)
INPUTS
(PER CONTROL INPUT)
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
tPD
tRB
tDR
VALID
VALID
(PER CONTROL INPUT)
RECOGNIZED
RECOGNIZED
VPFD (min)
VSO
tREC
相關(guān)PDF資料
PDF描述
M48T35YMH 256 Kbit 32Kb x8 TIMEKEEPER SRAM
M48T35AYSH 256 Kbit 32Kb x8 TIMEKEEPER SRAM
M48T35-70MH1 256 Kbit 32Kb x8 TIMEKEEPER SRAM
M48T35Y-70MH1 256 Kbit 32Kb x8 TIMEKEEPER SRAM
M48T35AV-70MH1 256 Kbit 32Kb x8 TIMEKEEPER SRAM
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