參數(shù)資料
型號(hào)： M48T559YMH
廠商： 意法半導(dǎo)體
英文描述： 64 Kbit 8Kb x8 TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED
中文描述： 64千位8KB的x8 SRAM的計(jì)時(shí)與地址/數(shù)據(jù)復(fù)用
文件頁數(shù)： 5/18頁
文件大小： 147K
代理商： M48T559YMH
5/18
M48T559Y
Table 7. Power Down/Up Trip Points DC Characteristics
(1)
(T
A
= 0 to 70 °C)
Symbol
Parameter
Note: 1. All voltages referenced to V
SS
.
2.
At 25°C.
Table 8. Power Down/Up AC Characteristics
(T
A
= 0 to 70 °C)
Symbol
Note: 1. V
PFD
(max) to V
PFD
(min) fall time of less than t
F
may result in deselection/write protection not occurring until 200μs after V
CC
pass-
es V
PFD
(min).
2. V
PFD
(min) to V
SS
fall time of less than t
FB
may cause corruption of RAM data.
Min
Typ
Max
Unit
V
PFD
Power-fail Deselect Voltage
4.2
4.35
4.5
V
V
SO
Battery Back-up Switchover Voltage
3.0
V
t
DR (2)
Expected Data Retention Time
7
YEARS
Parameter
Min
Max
Unit
t
PD
E at V
IH
before Power Down
0
μs
t
F
(1)
V
PFD
(max) to V
PFD
(min) V
CC
Fall Time
300
μs
t
FB
(2)
V
PFD
(min) to V
SS
V
CC
Fall Time
10
μs
t
R
V
PFD
(min) to V
PFD
(max) V
CC
Rise Time
10
μs
t
RB
V
SS
to V
PFD
(min) V
CC
Rise Time
1
μs
t
REC
V
PFD
(max) to RST High
40
200
ms
Figure 5. Power Down/Up Mode AC Waveforms
AI01384D
VCC
VPFD (max)
INPUTS
RST
(PER CONTROL INPUT)
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
tREC
tPD
tRB
tDR
VALID
VALID
(PER CONTROL INPUT)
RECOGNIZED
RECOGNIZED
VPFD (min)
VSO
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