參數(shù)資料
型號(hào): M48Z02-150PC1
廠商: 意法半導(dǎo)體
英文描述: FILTER SAW BANDPASS 44MHZ
中文描述: 5V的,16千位(2KB的× 8)ZEROPOWER的SRAM
文件頁(yè)數(shù): 9/12頁(yè)
文件大?。?/td> 85K
代理商: M48Z02-150PC1
DATA RETENTION MODE
With valid V
CC
applied, the M48Z02/12 operates as
a conventional BYTEWIDE
static RAM. Should
the supply voltage decay, the RAM will automat-
ically power-fail deselect, write protecting itself
when V
CC
falls within the V
PFD
(max), V
PFD
(min)
window. All outputs become high impedance, and
all inputs are treated as "don’t care."
Note:
A power failure during a write cycle may
corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM’s
content. At voltages below V
PFD
(min), the user can
be assured the memory will be in a write protected
state, provided the V
CC
fall time is not less than t
F
.
The M48Z02/12 may respond to transient noise
spikes on V
CC
that reach into the deselect window
during the time the device is sampling V
CC
. There-
fore, decoupling of the power supply lines is rec-
ommended.
The power switching circuit connects external V
CC
to the RAM and disconnects the battery when V
CC
rises above V
SO
. As V
CC
rises, the battery voltage
is checked. If the voltage is too low, an internal
Battery Not OK (BOK) flag will be set. The BOK flag
can be checked after power up. If the BOK flag is
set, the first write attempted will be blocked. The
flag is automatically cleared after the first write, and
normal RAM operation resumes. Figure 9 illus-
trates how a BOK check routine could be struc-
tured.
POWER SUPPLY DECOUPLING and UNDER-
SHOOT PROTECTION
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, result-
ing in spikes on the V
CC
bus. These transients can
be reduced if capacitors are used to store energy,
which stabilizes the V
CC
bus. The energy stored in
the bypass capacitors will be released as low going
spikes are generated or energy will be absorbed
when overshoots occur. A ceramic bypass capaci-
tor value of 0.1
μ
F (as shown in Figure 10) is
recommended in order to provide the needed filter-
ing.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate
negative voltage spikes on V
CC
that drive it to
values below V
SS
by as much as one Volt. These
negative spikes can cause data corruption in the
SRAM while in battery backup mode. To protect
from these voltage spikes, it is recommeded to
connect a schottky diode from V
CC
to V
SS
(cathode
connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
READ DATA
AT ANY ADDRESS
AI00607
IS DATA
COMPLEMENT
OF FIRST
READ
(BATTERY OK)
POWER-UP
YES
NO
WRITE DATA
COMPLEMENT BACK
TO SAME ADDRESS
READ DATA
AT SAME
ADDRESS AGAIN
NOTIFY SYSTEM
OF LOW BATTERY
(DATA MAY BE
CORRUPTED)
WRITE ORIGINAL
DATA BACK TO
SAME ADDRESS
(BATTERY LOW)
CONTINUE
Figure 9. Checking the BOK Flag Status
AI02169
VCC
0.1
μ
F
DEVICE
VCC
VSS
Figure 10. Supply Voltage Protection
9/12
M48Z02, M48Z12
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