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參數(shù)資料
| 型號(hào)： | M48Z35 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 Kbit 32Kb x8 ZEROPOWER SRAM |
| 中文描述： | 256千位的32KB的SRAM x8 ZEROPOWER |
| 文件頁(yè)數(shù)： | 10/18頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | M48Z35 |
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M48Z35, M48Z35Y
10/18
POWER SUPPLY DECOUPLING and
UNDERSHOOT PROTECTION
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1μF (as shown in Figure
9) is recommended in order to provide the needed
filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one Volt. These nega-
tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
CC
to V
SS
(cathode
connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
Figure 9. Supply Voltage Protection
AI02169
VCC
0.1
μ
F
DEVICE
VCC
VSS
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