參數(shù)資料
型號(hào): M48Z35AY-70PC1TR
廠商: 意法半導(dǎo)體
英文描述: 256 Kbit 32Kb x8 ZEROPOWER SRAM
中文描述: 256千位的32KB的SRAM x8 ZEROPOWER
文件頁數(shù): 5/18頁
文件大?。?/td> 135K
代理商: M48Z35AY-70PC1TR
5/18
M48Z35, M48Z35Y
Table 5. Capacitance
(1, 2)
(T
A
= 25 °C)
Symbol
Note: 1. Effective capacitance measured with power supply at 5V.
2. Sampled only, not 100% tested.
3. Outputs deselected.
Table 6. DC Characteristics
(T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 4.75V to 5.5V or 4.5V to 5.5V)
Symbol
Parameter
Note: 1. Outputs deselected.
2.
Negative spikes of –1V allowed for up to 10ns once per cycle.
Table 7. Power Down/Up Trip Points DC Characteristics
(1)
(T
A
= 0 to 70 °C or –40 to 85 °C)
Symbol
Parameter
Note: 1. All voltages referenced to V
SS
.
2.
At 25 °C.
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
10
pF
C
IO (3)
Input / Output Capacitance
V
OUT
= 0V
10
pF
Test Condition
Min
Max
Unit
I
LI
(1)
Input Leakage Current
0V
V
IN
V
CC
±1
μA
I
LO
(1)
Output Leakage Current
0V
V
OUT
V
CC
±5
μA
I
CC
Supply Current
Outputs open
50
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
3
mA
I
CC2
Supply Current (Standby) CMOS
E = V
CC
– 0.2V
3
mA
V
IL
(2)
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2.2
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage
I
OH
= –1mA
2.4
V
Min
Typ
Max
Unit
V
PFD
Power-fail Deselect Voltage (M48Z35)
4.5
4.6
4.75
V
V
PFD
Power-fail Deselect Voltage (M48Z35Y)
4.2
4.35
4.5
V
V
SO
Battery Back-up Switchover Voltage (M48Z35/35Y)
3.0
V
t
DR
(2)
Expected Data Retention Time
10
YEARS
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