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參數(shù)資料
| 型號： | M48Z35Y-70MH1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 Kbit 32Kb x8 ZEROPOWER SRAM |
| 中文描述： | 256千位的32KB的SRAM x8 ZEROPOWER |
| 文件頁數(shù)： | 10/18頁 |
| 文件大?。?/td> | 135K |
| 代理商： | M48Z35Y-70MH1 |
M48Z35, M48Z35Y
10/18
POWER SUPPLY DECOUPLING and
UNDERSHOOT PROTECTION
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1μF (as shown in Figure
9) is recommended in order to provide the needed
filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one Volt. These nega-
tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
CC
to V
SS
(cathode
connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
Figure 9. Supply Voltage Protection
AI02169
VCC
0.1
μ
F
DEVICE
VCC
VSS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M48Z35Y-70MH1E | 功能描述:NVRAM 256K (32Kx8) 70ns RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| M48Z35Y-70MH1F | 功能描述:NVRAM 256K (32Kx8) 70ns RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| M48Z35Y-70MH1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit (32 Kbit x 8) ZEROPOWER SRAM |
| M48Z35Y-70MH6 | 制造商:STMicroelectronics 功能描述:NVRAM SNAPHAT 256K 48Z35 SOIC28 |
| M48Z35Y-70MH6E | 功能描述:IC NVSRAM 256KBIT 70NS 28SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
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