參數(shù)資料
型號(hào)： M48Z35Y-70MH6TR
廠商： 意法半導(dǎo)體
英文描述： 256 Kbit 32Kb x8 ZEROPOWER SRAM
中文描述： 256千位的32KB的SRAM x8 ZEROPOWER
文件頁(yè)數(shù)： 10/18頁(yè)
文件大小： 135K
代理商： M48Z35Y-70MH6TR
M48Z35, M48Z35Y
10/18
POWER SUPPLY DECOUPLING and
UNDERSHOOT PROTECTION
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1μF (as shown in Figure
9) is recommended in order to provide the needed
filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one Volt. These nega-
tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
CC
to V
SS
(cathode
connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
Figure 9. Supply Voltage Protection
AI02169
VCC
0.1
μ
F
DEVICE
VCC
VSS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M48Z35Y-70PC1 功能描述:NVRAM 256K (32Kx8) 70ns RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
M48Z35Y-70PC1 制造商:STMicroelectronics 功能描述:NVRAM 10 YR BATTERY 256K 48Z35
M48Z35Y-70PC1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256Kbit (32Kbit x 8) ZEROPOWER SRAM
M48Z35Y-70PC1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256Kbit (32Kbit x 8) ZEROPOWER SRAM
M48Z35Y-70PC1TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit 32Kb x8 ZEROPOWER SRAM
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