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參數(shù)資料
| 型號(hào)： | M50LPW040K5T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座3V電源低引腳數(shù)快閃記憶體 |
| 文件頁(yè)數(shù)： | 20/36頁(yè) |
| 文件大?。?/td> | 272K |
| 代理商： | M50LPW040K5T |
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M50LPW040
20/36
Table 20. DC Characteristics
(T
A
= 0 to 70°C or –20 to 85°C; V
CC
= 3.0 to 3.6V)
Symbol
Parameter
Note: 1. Sampled only, not 100% tested.
2. Input leakage currents include High-Z output leakage for all bi-directional buffers with tri-state outputs.
Interface
Test Condition
Min
Max
Unit
V
IH
Input High Voltage
LPC
0.5 V
CC
V
CC
+ 0.5
V
A/A Mux
0.7 V
CC
V
CC
+ 0.3
V
V
IL
Input Low Voltage
LPC
–0.5
0.3 V
CC
V
A/A Mux
-0.5
0.8
V
V
IH
(INIT)
INIT Input High Voltage
LPC
1.35
V
CC
+ 0.5
V
V
IL
(INIT)
INIT Input Low Voltage
LPC
–0.5
0.2 V
CC
V
I
LI(2)
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±10
μ
A
I
LI2
IC, IDx Input Leakage
Current
IC, ID0, ID1, ID2 = V
CC
200
μ
A
R
IL
IC, IDx Input Pull Low
Resistor
20
100
k
V
OH
Output High Voltage
LPC
I
OH
= –500
μ
A
0.9 V
CC
V
A/A Mux
I
OH
= –100
μ
A
V
CC
– 0.4
V
V
OL
Output Low Voltage
LPC
I
OL
= 1.5mA
0.1 V
CC
V
A/A Mux
I
OL
= 1.8mA
0.45
V
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±10
μ
A
V
PP1
V
PP
Voltage
3
3.6
V
V
PPH
V
PP
Voltage (Fast
Program/Fast Erase)
11.4
12.6
V
V
PPLK(1)
V
PP
Lockout Voltage
1.5
V
V
LKO(1)
V
CC
Lockout Voltage
1.8
2.3
V
I
CC1
Supply Current (Standby)
LPC
LFRAME = 0.9 V
CC
, V
PP
= V
CC
All other inputs 0.9 V
CC
to 0.1 V
CC
V
CC
= 3.6V, f(CLK) = 33MHz
100
μ
A
I
CC2
Supply Current (Standby)
LPC
LFRAME = 0.1 V
CC
, V
PP
= V
CC
All other inputs 0.9 V
CC
to 0.1 V
CC
V
CC
= 3.6V, f(CLK) = 33MHz
10
mA
I
CC3
Supply Current
(Any internal operation
active)
LPC
V
CC
= V
CC
max, V
PP
= V
CC
f(CLK) = 33MHz
I
OUT
= 0mA
60
mA
I
CC4
Supply Current (Read)
A/A Mux
G = V
IH
, f = 6MHz
20
mA
I
CC5(1)
Supply Current
(Program/Erase)
A/A Mux
Program/Erase Controller Active
20
mA
I
PP
V
PP
Supply Current
(Read/Standby)
V
PP
>
V
CC
400
μ
A
I
PP1(1)
V
PP
Supply Current
(Program/Erase active)
V
PP
= V
CC
40
mA
V
PP
= 12V ± 5%
15
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M50LPW040N | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW040N1 | 功能描述:閃存 3.6V 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M50LPW040N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW040N5G | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL/SERL 3V/3.3V 4MBIT 512KX8 30NS 40TSOP - Bulk |
| M50LPW040N5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
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