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參數(shù)資料
| 型號： | M50LPW040K |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座3V電源低引腳數(shù)快閃記憶體 |
| 文件頁數(shù)： | 12/36頁 |
| 文件大?。?/td> | 272K |
| 代理商： | M50LPW040K |
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M50LPW040
12/36
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits. During the Chip Erase operation the
memory will only accept the Read Status Register
command. All other commands will be ignored.
Typical Chip Erase times are given in Table 12.
The Chip Erase command sets all of the bits in the
memory to ‘1’. See Figure 17, Chip Erase Flow-
chart and Pseudo Code, for a suggested flowchart
on using the Chip Erase command.
Block Erase Command.
The Block Erase com-
mand can be used to erase a block. Two Bus Write
operations are required to issue the command; the
second Bus Write cycle latches the block address
in the internal state machine and starts the Pro-
gram/Erase Controller. Once the command is is-
sued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
If the block is protected then the Block Erase
operation will abort, the data in the block will not be
changed and the Status Register will output the
error.
Table 11. Commands
Note:
X Don’t Care, PA Program Address, PD Program Data, A
1,2,3,4
Consecutive Addresses, BA Any address in the Block.
Read Memory Array.
After a Read Memory Array command, read the memory as normal until another command is issued.
Read Status Register.
After a Read Status Register command, read the Status Register as normal until another command is issued.
Read Electronic Signature.
After a Read Electronic Signature command, read Manufacturer Code, Device Code until a Read Mem-
ory Array command is issued.
Block Erase, Program.
After these commands read the Status Register until the command completes and another command is is-
sued.
Quadruple Byte Program.
This command is only valid in A/A Mux mode. Addresses A
, A
, A
and A
must be consecutive addresses
differing only for address bit A0 and A1. After this command read the Status Register until the command completes and another com-
mand is issued.
Chip Erase.
This command is only valid in A/A Mux mode. After this command read the Status Register until the command completes
and another command is issued.
Clear Status Register.
After the Clear Status Register command bits 1, 3, 4 and 5 in the Status Register are reset to ‘0’.
Program/Erase Suspend.
After the Program/Erase Suspend command has been accepted, issue Read Memory Array, Read Status
Register, Program (during Erase suspend) and Program/Erase resume commands.
Program/Erase Resume.
After the Program/Erase Resume command the suspended Program/Erase operation resumes, read the
Status Register until the Program/Erase Controller completes and the memory returns to Read Mode.
Invalid/Reserved.
Do not use Invalid or Reserved commands.
Command
C
Bus Write Operations
1st
2nd
3rd
4th
5th
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read Memory Array
1
X
FFh
Read Status Register
1
X
70h
Read Electronic Signature
1
X
90h
1
X
98h
Program
2
X
40h
PA
PD
2
X
10h
PA
PD
Quadruple Byte Program
5
X
30h
A
1
PD
A
2
PD
A
3
PD
A
4
PD
Chip Erase
2
X
80h
X
10h
Block Erase
2
X
20h
BA
D0h
Clear Status Register
1
X
50h
Program/Erase Suspend
1
X
B0h
Program/Erase Resume
1
X
D0h
Invalid/Reserved
1
X
00h
1
X
01h
1
X
60h
1
X
2Fh
1
X
C0h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M50LPW040K1T | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW040K5T | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW040N | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW040N1T | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW040N5T | 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M50LPW040K1 | 功能描述:閃存 3.6V 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M50LPW040K1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW040K5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW040N | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory |
| M50LPW040N1 | 功能描述:閃存 3.6V 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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