參數(shù)資料
型號(hào): M50LPW116N
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 2Mb x8, Boot Block 3V Supply Low Pin Count Flash Memory
中文描述: 16兆位的2Mb × 8,啟動(dòng)塊3V電源低引腳數(shù)快閃記憶體
文件頁(yè)數(shù): 9/36頁(yè)
文件大?。?/td> 259K
代理商: M50LPW116N
9/36
M50LPW116
Table 7. LPC Bus Write Field Definitions
Clock
Cycle
Number
Clock
Cycle
Count
Field
LAD0-
LAD3
Memory
I/O
Description
1
1
START
0000b
I
On the rising edge of CLK with LFRAME Low, the contents
of LAD0-LAD3 must be 0000b to indicate the start of a LPC
cycle.
2
1
CYCTY
PE +
DIR
011Xb
I
Indicates the type of cycle. Bits 3:2 must be 01b. Bit 1
indicates the direction of transfer: 1b for write. Bit 0 is don’t
care (X).
3-10
8
ADDR
XXXX
I
A 32-bit address phase is transferred starting with the most
significant nibble first. A26-A31 must be set to 1. A22 = 1 for
Array, A22 = 0 for registers access. For A21, A23-A25
values, refers to Table 2.
11-12
2
DATA
XXXX
I
Data transfer is two cycles, starting with the least significant
nibble.
13
1
TAR
1111b
I
The host drives LAD0-LAD3 to 1111b to indicate a
turnaround cycle.
14
1
TAR
1111b
(float)
O
The LPC Flash Memory takes control of LAD0-LAD3 during
this cycle.
15
1
SYNC
0000b
O
The LPC Flash Memory drives LAD0-LAD3 to 0000b,
indicating it has received data or a command.
16
1
TAR
1111b
O
The LPC Flash Memory drives LAD0-LAD3 to 1111b,
indicating a turnaround cycle.
17
1
TAR
1111b
(float)
N/A
The LPC Flash Memory floats its outputs and the host takes
control of LAD0-LAD3.
Low, V
IL
, for t
PLPH
. The memory resets to Read
mode upon return from Reset mode and the Lock
Registers return to their default states regardless
of their state before Reset, see Table 15. If RP or
INIT goes Low, V
IL
, during a Program or Erase
operation, the operation is aborted and the
memory cells affected no longer contain valid
data; the memory can take up to t
PLRH
to abort a
Program or Erase operation.
Block Protection.
Block
forced using the signals Top Block Lock, TBL, and
Protection
can
be
Write Protect, WP, regardless of the state of the
Lock Registers.
Address/Address Multiplexed (A/A Mux) Bus
Operations
The Address/Address Multiplexed (A/A Mux)
Interface has a more traditional style interface.
The signals consist of a multiplexed address
signals (A0-A10), data signals, (DQ0-DQ7) and
three control signals (RC, G, W). An additional
signal, RP, can be used to reset the memory.
Figure 5. LPC Bus Write Waveforms
AI04430
CLK
LFRAME
LAD0-LAD3
Number of
clock cycles
START
CYCTYPE
+ DIR
ADDR
DATA
TAR
SYNC
TAR
1
1
8
2
2
1
2
相關(guān)PDF資料
PDF描述
M50LPW116N1T 16 Mbit 2Mb x8, Boot Block 3V Supply Low Pin Count Flash Memory
M50LPW116N5T 16 Mbit 2Mb x8, Boot Block 3V Supply Low Pin Count Flash Memory
M51131L 2 CHANNEL ELECTRONIC VOLUME BALANCE
M51354AP TV IF SYSTEM
M51391ASP PAL/NTSC VIDEO CHROMA DEFLECTION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M50LPW116N1 功能描述:閃存 3.0V 16M (2Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M50LPW116N1T 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL/SERL 3V/3.3V 16MBIT 2MX8 40TSOP - Tape and Reel
M50LPW116N5G 功能描述:閃存 16 MBIT 3V SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M50LPW116N5T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Boot Block 3V Supply Low Pin Count Flash Memory
M50LPW116N5TG 功能描述:閃存 16 MBIT 3V SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel