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參數(shù)資料
| 型號： | M52D32162A-7.5TG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 2M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 |
| 封裝： | 0.400 INCH, LEAD FREE, TSOP2-54 |
| 文件頁數(shù)： | 2/30頁 |
| 文件大小： | 784K |
| 代理商： | M52D32162A-7.5TG |
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ES MT
M52D32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.4
2/30
SDRAM
1M x 16Bit x 2Banks
FEATURES
z
1.8V power supply
z
LVCMOS compatible with multiplexed address
z
Dual banks operation
z
MRS cycle with address key programs
-
CAS Latency (1, 2 & 3 )
-
Burst Length (1, 2, 4, 8 & full page)
-
Burst Type (Sequential & Interleave)
z
EMRS cycle with address key programs.
z
All inputs are sampled at the positive going edge of the
system clock
z
Burst Read Single-bit Write operation
z
Special Function Support.
-
PASR (Partial Array Self Refresh )
-
TCSR (Temperature compensated Self Refresh)
-
DS (Driver Strength)
z
DQM for masking
z
Auto & self refresh
z
64ms refresh period (4K cycle)
Synchronous DRAM
GENERAL DESCRIPTION
The M52D32162A is 33,554,432 bits synchronous high
data rate Dynamic RAM organized as 2 x 1,048,576 words
by 16 bits, fabricated with high performance CMOS
technology. Synchronous design allows precise cycle
control with the use of system clock I/O transactions are
possible on every clock cycle. Range of operating
frequencies, programmable burst length and programmable
latencies allow the same device to be useful for a variety of
high bandwidth, high performance memory system
applications.
ORDERING INFORMATION
MAX
Freq.
Part NO.
Package
Comments
M52D32162A -10TG 100MHz 54 PIN TSOP(II)
Pb-free
M52D32162A -7.5TG 133MHz 54 PIN TSOP(II)
Pb-free
M52D32162A -10BG 100MHz 54 Ball VFBGA
Pb-free
M52D32162A -7.5BG 133MHz 54 Ball VFBGA
Pb-free
PIN CONFIGURATION (TOP VIEW)
TOP View
54 Ball FVBGA(8mmx8mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
NC
BA
A
10
/AP
A
0
A
1
A
2
A
3
V
DD
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
NC
UDQM
CLK
CKE
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
V
SS
DQ14
DQ12
DQ8
UDQM
DQ15
DQ13
DQ11
DQ9
NC
CLK
A11
A7
NC
A8
V
SSQ
CKE
A9
A6
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
G
H
J
DQ0
DQ2
DQ4
DQ6
LDQM
RAS
NC
A1
V
DD
DQ1
DQ3
DQ5
DQ7
WE
CS
A10
V
DDQ
V
SSQ
V
DDQ
V
SSQ
V
DD
CAS
BA
A0
DQ10
A5
V
SS
A4
A2
V
DD
A9
V
DDQ
V
SSQ
V
DDQ
V
SS
相關PDF資料 |
PDF描述 |
|---|---|
| M52D32321A | 512K x 32Bit x 2Banks Synchronous DRAM |
| M52D32321A-10BG | 512K x 32Bit x 2Banks Synchronous DRAM |
| M52D32321A-7.5BG | 512K x 32Bit x 2Banks Synchronous DRAM |
| M52S128168A | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128168A-10BG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M52D32162A-7BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52D32162A-7TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52D32321A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Mobile Synchronous DRAM |
| M52D32321A_09 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Mobile Synchronous DRAM |
| M52D32321A-10BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Mobile Synchronous DRAM |
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