參數(shù)資料
型號: M52S16161A-8BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 512K x 16Bit x 2Banks Synchronous DRAM
中文描述: 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
封裝: 6.4 X 10.10 MM, 0.65 MM PITCH, LEAD FREE, VFBGA-60
文件頁數(shù): 18/29頁
文件大?。?/td> 770K
代理商: M52S16161A-8BG
ES MT
Read & Write Cycle at Different Bank @ Burst Length = 4
M52S16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.5
18/29
*Note: 1.t
CDL
should be met to complete write.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M52S16161A-8TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM
M52S32162A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM
M52S32162A_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A-10BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM