參數(shù)資料
型號(hào): M52S32162A
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 1M x 16Bit x 2Banks Synchronous DRAM
中文描述: 100萬(wàn)x 16Bit的X 2Banks同步DRAM
文件頁(yè)數(shù): 25/30頁(yè)
文件大?。?/td> 787K
代理商: M52S32162A
ES MT
Active/Precharge Power Down Mode @CAS Latency=2, Burst Length=4
M52S32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.2
25/30
*Note :
1.Both banks should be in idle state prior to entering precharge power down mode.
2.CKE should be set high at least 1CLK+tss prior to Row active command.
3.Can not violate minimum refresh specification. (32ms)
C L O C K
C K E
A D D R
DQ
DQ M
A10/AP
Active
Power-down
Exit
P r e c h a r g e
: D o n ' t c a r e
*Note3
*N ot e 2
*N ot e 1
t
S S
Ra
Ra
Qa0
Qa1
Qa2
t
S H Z
Precharge
Power-Down
Entry
Precharge
Power-Down
Exit
Row Active
Active
Power-down
Entry
Read
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
Ca
BA
RAS
CAS
CS
W E
t
SS
t
SS
相關(guān)PDF資料
PDF描述
M52S32162A-10BG 1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A-10TG 1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A-7.5BG 1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A-7.5TG 1M x 16Bit x 2Banks Synchronous DRAM
M538002 524,288-Word x 16-Bit or 1,048,576 x 8-Bit Mask ROM
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M52S32162A-10TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM