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參數(shù)資料
| 型號(hào)： | M54523P |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE |
| 中文描述： | 7個(gè)單位500mA的達(dá)林頓晶體管與鉗位二極管陣列 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | M54523P |
Jan.2000
Unit :
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
2.7k
3k
5k
COM
IN7
→
→
O7
7
10
IN5
→
→
O5
5
12
INPUT
OUTPUT
IN4
→
→
O4
4
13
IN3
→
→
O3
3
14
IN2
→
→
O2
2
15
1
IN1
→
→
O1
16
GND
9
8
IN6
→
→
O6
6
11
→
COM COMMON
16P2N-A(FP)
16P4(P)
Package type
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M54523P and M54523FP are seven-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
G
High breakdown voltage (BV
CEO
≥
50V)
G
High-current driving (I
C(max)
= 500mA)
G
With clamping diodes
G
Driving available with PMOS IC ouput
G
Wide operating temperature range (Ta = –20 to +75
°
C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and interfaces between standard
MOS-bipolar logic IC
FUNCTION
The M54523P and M54523FP each have seven circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 2.7k
between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin. The output transistor
emitters are all connected to the GND pin (pin 8). The col-
lector current is 500mA maximum. Collector-emitter supply
voltage is 50V maximum.The M54523FP is enclosed in a
molded small flat package, enabling space-saving design.
CIRCUIT DIAGRAM
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
mA
V
mA
V
W
°
C
°
C
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Ratings
Symbol
V
CEO
I
C
V
I
I
F
V
R
P
d
T
opr
T
stg
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Output, H
Current per circuit output, L
Ta = 25
°
C, when mounted on board
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