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參數(shù)資料
| 型號： | M54561P |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| 中文描述： | 7個單位為300mA源類型達林頓晶體管陣列鉗位二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 80K |
| 代理商： | M54561P |
Aug. 1999
27k
20k
7k
3k
INPUT
OUTPUT
SUB*
V
S
The seven circuits share the V
S
and SUB.
The diodes shown by broken line are parasite diodes and must
not be used.
* SUB must be the lowest voltage in a circuit.
Unit :
PIN CONFIGURATION (TOP VIEW)
DESCRIPTION
M54561P is seven-circuit output-sourcing Darlington transis-
tor arrays. The circuits are made of PNP and NPN transis-
tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
G
High breakdown voltage (BV
CEO
≥
40V)
G
High-current driving (Io(max) = –300mA)
G
With output clamping diodes
G
Active “L” input
G
Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
FUNCTION
The M54561P have seven circuits of current-sourcing out-
puts. Darlington transistor, which are made of PNP transis-
tor and NPN transistor. Resistance of 20k
is connected be-
tween PNP transistor base and input pin. PNP transistor
emitters and NPN transistor collector is connected V
S
(pin 8),
and spike killer clamping diode is provided between each
output pins.
Output currene is 300mA maximum and supply voltage V
S
is
40V maximum operate Active “L” input.
CIRCUIT SCHEMATIC
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54561P
7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
1
IN1
→
INPUTS
OUTPUTS
IN2
→
IN3
→
IN4
→
IN5
→
IN6
→
IN7
→
SUB
V
S
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→
O7
→
O6
→
O5
→
O4
→
O3
→
O2
→
O1
Outline 16P4
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –20 ~ +75°C)
–0.5 ~ V
S
40
–0.5 ~ V
S
–300
–300
40
1.47
–20 ~ +75
–55 ~ +125
Ratings
Unit
V
V
V
mA
mA
V
W
°C
°C
Symbol
V
CEO
V
S
V
I
I
O
I
F
V
R
P
d
T
opr
T
stg
Parameter
Conditions
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, L
Current per circuit output, H
Ta = 25°C, when mounted on board
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| M54562 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
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