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參數(shù)資料
| 型號(hào)： | M54587 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| 中文描述： | 8個(gè)單位500mA的達(dá)林頓晶體管陣列鉗位二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | M54587 |
Mar.2002
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ns
ns
t
on
t
off
—
—
120
2400
—
—
Symbol
Unit
Parameter
Test conditions
Limits
typ
min
max
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
C
L
= 15pF (note 1)
Turn-on time
Turn-off time
V
V
V
8
V
CC
V
CC
–
3.6
5
—
—
4
V
CC
–
0.7
0
V
CC
V
IH
V
IL
Collector current
Per channel
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
I
C
0
0
—
—
mA
400
200
Parameter
Limits
typ
Symbol
Unit
Supply voltage
min
max
“
H
”
input voltage
“
L
”
input voltage
V
= 5V, Duty Cycle
P : no more than 34%
FP : no more than 15%
V
= 5V, Duty Cycle
P : no more than 6%
FP : no more than 5%
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Supply voltage
Collector-emitter voltage
Input voltage
Collector current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
V
V
mA
mA
V
W
°
C
°
C
10
–
0.5 ~ +50
–
0.5 ~ V
CC
500
500
50
1.79/1.1
–
20 ~ +75
–
55 ~ +125
Ratings
Symbol
V
CC
V
CEO
V
I
I
C
I
F
V
R
P
d
T
opr
T
stg
Parameter
Conditions
Unit
Output, H
Current per circuit output, L
Ta = 25
°
C, when mounted on board
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = –40 ~ +85
°
C)
: The typical values are those measured under ambient temperature (Ta) of 25
°
C. There is no guarantee that these values are obtained
under any conditions.
—
1.2
0.95
–
290
1.4
0.1
1.9
3500
50
—
—
—
—
—
—
2000
V
(BR) CEO
I
I
V
F
I
R
I
CC
h
FE
V
V
μ
A
V
μ
A
mA
—
—
2.4
1.6
–
600
2.4
100
3
—
Symbol
Unit
Parameter
Test conditions
Limits
typ
min
max
Collector-emitter breakdown voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
Supply current (AN only Input)
DC amplification factor
I
CEO
= 100
μ
A
V
I
= V
CC
–
3.6V
V
I
= V
CC
–
3.6V
I
F
= 400mA
V
R
= 50V
V
CC
= 5V, V
I
= V
CC
–
3.5V
V
CC
= 5V, V
CE
= 4V, I
C
= 350mA, Ta = 25
°
C
V
CE(sat)
Collector-emitter saturation voltage
I
C
= 400mA
I
C
= 200mA
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