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參數(shù)資料
| 型號： | M57955L |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HYBRID IC FOR DRIVING HIGH BETA TRANSISTOR MODULES |
| 中文描述： | 混合集成電路高貝塔駕駛晶體管模塊 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 32K |
| 代理商： | M57955L |
Feb.1999
MITSUBISHI HYBRID ICs
M57955L
HYBRID IC FOR DRIVING HIGH BETA TRANSISTOR MODULES
CIRCUIT DIAGRAM
DESCRIPTION
M57955L is a Hybrid Integrated Circuit designed for driving High
Beta Transistor Modules QM50DY-HB, etc., in an Inverter application.
This device operates as an isolation amplifier Transistor Modules
due to the electrical isolation between the input and output circuits
with a opto-coupler, as well as its driving capability which only re-
quires single power supply.
FEATURES
G
Electrical isolation between input and output with integrated opto-
coupler. V
iso
=2500Vrms
G
Applicable with single power supply (7 ~ 9V)
G
Applicable with TTL input
APPLICATION
To drive High Beta Transistor Modules for Inverter applications
OUTLINE DRAWING
Dimensions in mm
BLOCK DIAGRAM
2.54
0.55±0.1
2.54
7=17.78
0.35±0.2
8.5MAX.
10.0MAX.
2
1
5
6
7
8
4MAX.
3MAX.
1.8MAX.
4
26MAX.
390
2
1
Tr1
Tr2
5
6
7
8
INTER-
CIRCUIT
OPTO-COUPLER
PC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M57957L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HYBRID IC FOR DRIVING IGBT MODULES |
| M57958L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HYBRID IC FOR DRIVING IGBT MODULES |
| M57959 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HYBRID IC FOR DRIVING IGBT MODULES |
| M57959AL-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT MODULE GATE HYBRID IC |
| M57959L | 功能描述:IC GATE DRVR FOR IGBT MOD RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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