參數(shù)資料
型號: M58BF008B100ZA6T
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit 256Kb x32, Burst Flash Memory
中文描述: 8兆位的256Kb X32號,突發(fā)快閃記憶體
文件頁數(shù): 17/36頁
文件大?。?/td> 231K
代理商: M58BF008B100ZA6T
17/36
M58BF008
Table 16. Asynchronous Read AC Characteristics
(1)
(
T
A
= –40 to 125
°
C; V
DD
= 5V
±
10% and V
DDQ
= 3.3V
±
0.3V)
Symbol
Alt
Note: 1. See AC Testing Measurements Conditions for timing measurements.
2. Sampled only, not 100% tested.
3. G may be delayed up to t
ELQV
-t
GLQV
after falling edge of E without increasing t
ELQV
.
Parameter
Min
Max
Unit
t
AVAV
t
RC
Address Valid to Next Address Valid
100
ns
t
AVQV
t
ACC
Address Valid to Output Valid
100
ns
t
AXQX(2)
t
OH
Address Transition to Output Transition
0
ns
t
EHQX(2)
t
OH
Chip Enable High to Output Transition
0
ns
t
ELQV(2, 3)
t
CE
Chip Enable Low to Output Valid
100
ns
t
ELQX(2)
t
LZ
Chip Enable Low to Output Transition
0
ns
t
EXQZ(2)
t
HZ
Chip Enable High to Output Hi-Z
25
ns
t
GHQX(2)
t
OH
Output Enable High to Output Transition
0
ns
t
GHQZ(2)
t
DF
Output Enable High to Output Hi-Z
25
ns
t
GLQV(2)
t
OE
Output Enable Low to Output Valid
30
ns
t
GLQX
t
OLZ
Output Enable Low to Output Transition
0
ns
Figure 6. Asynchronous Read AC Waveforms
AI03571
G
A12-A29
DQ0-DQ31
VALID
VALID
RP
E, LBA
tGLQX
tGLQV
tAVAV
tGHQZ
tGHQX
tAVQV
tELQV
tELQX
tEHQX
tEHQZ
tPHQV
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