參數(shù)資料
型號(hào): M58LW064D110N1
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
中文描述: 64兆位(和8Mb × 8,4Mb的x16插槽,統(tǒng)一座)3V電源快閃記憶體
文件頁數(shù): 30/51頁
文件大小: 349K
代理商: M58LW064D110N1
M58LW064D
30/51
Figure 12. Write AC Waveforms, Chip Enable Controlled
Note: 1. V
IH
= Device Disabled (first edge of E0, E1 or E2), V
IL
= Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more
details.
Table 18. Write AC Characteristics, Chip Enable Controlled.
Symbol
Parameter
Test Condition
M58LW064D
Unit
110
t
AVEH
Address Valid to Chip Enable High
W = V
IL
Min
50
ns
t
DVEH
Data Input Valid to Chip Enable High
W = V
IL
Min
50
ns
t
WLEL
Write Enable Low to Chip Enable Low
Min
0
ns
t
VPHEH
Program/Erase Enable High to Chip Enable High
Min
0
ns
t
EHAX
Chip Enable High to Address Transition
W = V
IL
Min
5
ns
t
EHBL
Chip Enable High to Status/(Ready/Busy) low
Max
500
ns
t
EHDX
Chip Enable High to Input Transition
W = V
IL
Min
5
ns
t
EHWH
Chip Enable High to Write Enable High
Min
0
ns
t
GHEL
Output Enable High to Chip Enable Low
Min
20
ns
t
EHGL
Chip Enable High to Output Enable Low
Min
35
ns
t
EHEL
Chip Enable High to Chip Enable Low
Min
30
ns
t
ELEH
Chip Enable Low to Chip Enable High
W = V
IL
Min
70
ns
AI06216
DQ0-DQ15
STS
E2, E1, E0
(1)
A0-A22
W
G
INPUT
VALID
tEHWH
tAVEH
tELEH
tWLEL
VPEN
tEHAX
tEHEL
tEHDX
tDVEH
tVPHEH
tEHGL
tGHEL
tEHBL
(Ready/Busy mode)
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