參數(shù)資料
型號(hào)： M58LW064D110N6
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
中文描述： 64兆位（和8Mb × 8，4Mb的x16插槽，統(tǒng)一座）3V電源快閃記憶體
文件頁數(shù)： 11/51頁
文件大小： 349K
代理商： M58LW064D110N6
11/51
M58LW064D
sistor. The use of an open-drain output allows the
STS pins from several memories to be connected
to a single pull-up resistor (a Low will indicate that
one, or more, of the memories is busy).
STS is not Low during a reset unless the reset was
applied when the Program/Erase controller was
active
Program/Erase Enable (V
PEN
).
The
Erase Enable input, V
PEN,
is used to protect all
blocks, preventing Program and Erase operations
from affecting their data.
Program/Erase Enable must be kept High during
all Program/Erase Controller operations, other-
wise the operations is not guaranteed to succeed
and data may become corrupt.
V
DD
Supply Voltage.
V
DD
provides the power
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Erase).
Program/
V
DDQ
Supply Voltage.
V
DDQ
provides the power
supply to the I/O pins and enables all Outputs to
be powered independently from V
DD
. V
DDQ
can be
tied to V
DD
or can use a separate supply.
It is recommended to power-up and power-down
V
DD
and V
DDQ
together to avoid any condition that
would result in data corruption.
V
SS
Ground.
Ground, V
SS,
is the reference for
the core power supply. It must be connected to the
system ground.
V
SSQ
Ground.
V
SSQ
ground is the reference for
the input/output circuitry driven by V
DDQ
. V
SSQ
must be connected to V
SS
.
Note: Each device in a system should have
V
DD
and V
DDQ
decoupled with a 0.1μF ceramic
capacitor close to the pin (high frequency, in-
herently low inductance capacitors should be
as close as possible to the package). See Fig-
ure 8, AC Measurement Load Circuit.
Table 2. Device Enable
Note: For single device operations, E2 and E1 can be connected to V
SS
.
E2
E1
E0
Device
V
IL
V
IL
V
IL
Enabled
V
IL
V
IL
V
IH
Disabled
V
IL
V
IH
V
IL
Disabled
V
IL
V
IH
V
IH
Disabled
V
IH
V
IL
V
IL
Enabled
V
IH
V
IL
V
IH
Enabled
V
IH
V
IH
V
IL
Enabled
V
IH
V
IH
V
IH
Disabled
相關(guān)PDF資料
PDF描述
M58LW064D110N6E 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N6F 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N6T 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW128BZA 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW128B150N6E 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064D110N6E 功能描述:閃存 64 MBIT 3V SUPPLY F RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064D110N6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N6T 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW064D110ZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
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