參數(shù)資料
型號(hào): M58LW064D110ZA6T
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
中文描述: 64兆位(和8Mb × 8,4Mb的x16插槽,統(tǒng)一座)3V電源快閃記憶體
文件頁(yè)數(shù): 1/51頁(yè)
文件大?。?/td> 349K
代理商: M58LW064D110ZA6T
1/51
PRELIMINARY DATA
December 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M58LW064D
64 Mbit (8Mb x8, 4Mb x16, Uniform Block)
3V Supply Flash Memory
FEATURES SUMMARY
I
WIDE x8 or x16 DATA BUS for HIGH
BANDWIDTH
I
SUPPLY VOLTAGE
– V
DD
= V
DDQ
= 2.7 to 3.6V for Program, Erase
and Read operations
I
ACCESS TIME
– Random Read 110ns
– Page Mode Read 110/25ns
I
PROGRAMMING TIME
– 16 Word Write Buffer
– 12μs Word effective programming time
I
64 UNIFORM 64 KWord/128KByte MEMORY
BLOCKS
I
BLOCK PROTECTION/ UNPROTECTION
I
PROGRAM and ERASE SUSPEND
I
128 bit PROTECTION REGISTER
I
COMMON FLASH INTERFACE
I
100, 000 PROGRAM/ERASE CYCLES per
BLOCK
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M58LW064D: 0017h
Figure 1. Packages
TSOP56 (N)
14 x 20 mm
TBGA64 (ZA)
10 x 13 mm
TBGA
相關(guān)PDF資料
PDF描述
M58LW064D110ZA 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA1 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N1F 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N1T 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N6 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
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