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參數(shù)資料
| 型號(hào)： | M58LW128B150ZA6E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| 中文描述： | 128兆位和8Mb x16或4Mb的X32號(hào)，統(tǒng)一座，突發(fā)3V電源閃存 |
| 文件頁(yè)數(shù)： | 54/65頁(yè) |
| 文件大?。?/td> | 932K |
| 代理商： | M58LW128B150ZA6E |
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M58LW128A, M58LW128B
54/65
Table 31. CFI - Device Voltage and Timing Specification
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
4.
For M58LW128B, A1 = Don’t Care.
5. DQ31-DQ16 are available in the M58LW128B only. They are in the high-impedance state when the device operates In x16 mode.
Address
(4)
A23-A1 (M58LW128A)
A23-A2 (M58LW128B)
DQ31-DQ16
(5)
DQ15-DQ0
Description
1Bh
0000
0027h
(1)
V
DD
Min, 2.7V
1Ch
0000
0036h
(1)
V
DD
max, 3.6V
1Dh
0000
0000h
(2)
V
PP
min – Not Available
1Eh
0000
0000h
(2)
V
PP
max – Not Available
1Fh
0000
0000h
(3)
2
n
μs typical time-out for Word Program – Not Available,
DWord Program – Not Available
20h
0000
0008h
2
n
μs typical time-out for max Buffer Write
21h
0000
000Ah
2
n
ms, typical time-out for Erase Block
22h
0000
0000h
(3)
2
n
ms, typical time-out for Chip Erase – Not Available
23h
0000
0000h
(3)
2
n
x typical for Word Program time-out max – (Word and
Dword Not Available)
24h
0000
0004h
2
n
x typical for Buffer Write time-out max
25h
0000
0004h
2
n
x typical for individual Block Erase time-out maximum
26h
0000
0000h
(3)
2
n
x typical for Chip Erase max time-out – Not Available
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW128B150ZA6F | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150ZA6T | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N1E | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N1F | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW128B150ZA6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128BZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128D110N1 | 制造商:Micron Technology Inc 功能描述:128M (16MX8/8MX16) 3V, UNIFORM SECTOR, TSOP56, COM - Trays |
| M58LW64D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
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