參數(shù)資料
型號(hào)： M58WR032F-ZB
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述： 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 71/86頁
文件大?。?/td> 1306K
代理商： M58WR032F-ZB
71/86
M58WR032FT, M58WR032FB
Figure 24. Quadruple Word Program Flowchart and Pseudo Code
Note: 1. Status check of SR1 (Protected Block), SR3 (V
PP
Invalid) and SR4 (Program Error) can be made after each program operation or
after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 to Address 4 must be consecutive addresses differing only for bits A0 and A1.
4. Any address within the bank can equally be used.
Write 56h
AI06977b
Start
Write Address 1
& Data 1 (3, 4)
Read Status
Register (4)
YES
NO
SR7 = 1
YES
NO
SR3 = 0
NO
SR4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
YES
End
YES
NO
SR1 = 0
Program to Protected
Block Error (1, 2)
Write Address 2
& Data 2 (3)
quadruple_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2,
addressToProgram3, dataToProgram3,
addressToProgram4, dataToProgram4)
{
writeToFlash (addressToProgram1, 0x56);
/*see note (4) */
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
writeToFlash (addressToProgram3, dataToProgram3) ;
/*see note (3) */
writeToFlash (addressToProgram4, dataToProgram4) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
do {
status_register=readFlash (addressToProgram) ;
/"see note (4) "/
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
if (status_register.SR==1) /*program to protect block error */
error_handler ( ) ;
}
Write Address 3
& Data 3 (3)
Write Address 4
& Data 4 (3)
相關(guān)PDF資料
PDF描述
M58WR032F-ZBT RECTIFIER SCHOTTKY SINGLE 1A 40V 25A-ifsm 0.9V-vf 10mA-ir DO-41 5K/REEL-13
M58WR032FB DIODE, SCHOTTKY, 20V, 3A.
M58WR032FT60ZB6E 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6F 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6T 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR032F-ZBE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZBF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZBT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032KB70ZB6E 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 32Mbit 2M x 16bit 70ns 56-Pin VFBGA 制造商:Micron Technology Inc 功能描述:32M (X16) 1.8V, MULTIPLE BANK BURST, VFBGA56, IND, HAZMAT - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 70NS 56VFBGA
M58WR032KB70ZB6F 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
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