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參數(shù)資料
| 型號(hào)： | M58WR032F-ZBE |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 37/86頁(yè) |
| 文件大?。?/td> | 1306K |
| 代理商： | M58WR032F-ZBE |
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M58WR032FT, M58WR032FB
Note: 1. T
A
= –40 to 85°C; V
DD
= 1.7V to 2V; V
DDQ
= 1.7V to 2.24V.
2. The difference between Preprogrammed and not preprogrammed is not significant (30ms).
3. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution).
4. Measurements performed at 25°C. T
A
= 25°C ±5°C for Quadruple Word, Double Word
and Quadruple Enhanced Factory Program.
V
P
P
Erase
Parameter Block (4 KWord)
0.25
2.5
s
Main Block (32 KWord)
0.8
4
s
Bank (4Mbit)
3.5
s
Program
(3)
Word/ Double Word/ Quadruple Word
(4)
8
100
μs
Parameter Block
(4 KWord)
Quad-Enhanced
Factory
10
ms
Enhanced Factory
25
ms
Quadruple Word
(4)
8
ms
Word
32
ms
Main Block (32
KWord)
Quad-Enhanced
Factory
80
ms
Enhanced Factory
200
ms
Quadruple Word
(4)
64
ms
Word
256
ms
Bank (4Mbit)
Quad-Enhanced
Factory
(4)
520
ms
Quadruple Word
(4)
510
ms
Program/Erase
Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles
Parameter
Condition
Min
Typ
Typical after
100k W/E
Cycles
Max
Unit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58WR032FB80ZB6T | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT60ZB6 | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT80ZB6E | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT80ZB6F | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR032F-ZBF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032F-ZBT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032KB70ZB6E | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 32Mbit 2M x 16bit 70ns 56-Pin VFBGA 制造商:Micron Technology Inc 功能描述:32M (X16) 1.8V, MULTIPLE BANK BURST, VFBGA56, IND, HAZMAT - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 70NS 56VFBGA |
| M58WR032KB70ZB6F | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
| M58WR032KB70ZB6F TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 70NS 56VFBGA |
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