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參數(shù)資料
| 型號： | M58WR032FB70ZB6E |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 83/86頁 |
| 文件大?。?/td> | 1306K |
| 代理商： | M58WR032FB70ZB6E |
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M58WR032FT, M58WR032FB
Table 42. Command Interface States - Lock Table, Next State
Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-
tory Program, P/E. C. = Program/Erase Controller.
2. EFP and Quad EFP are allowed only when Status Register bit SR0 is set to ‘0’. EFP and Quad EFP are busy if Block Address is
first EFP Address. Any other commands are treated as data.
3. EFP and Quad EFP exit when Block Address is different from first Block Address and data is FFFFh.
4. If the P/E.C. is active, both cycles are ignored.
5. Illegal commands are those not defined in the command set.
Current CI State
Command Input
Block
Lock-Down
Confirm
(2Fh)
Lock/CR
Setup
(4)
(60h)
OTP Setup
(4)
(C0h)
Block Lock
Confirm
(01h)
Set CR
Confirm
(03h)
EFP Exit,
Quad EFP
Exit
(3)
Illegal
Command
(5)
P/E. C.
Operation
Completed
Ready
Lock/CR
Setup
OTP Setup
Ready
N/A
Lock/CR Setup
Ready (Lock error)
Ready
Ready (Lock error)
N/A
OTP
Setup
Busy
Setup
OTP Busy
N/A
Ready
Program
Program Busy
N/A
Busy
Suspend
Setup
Busy
Program Busy
Ready
Program Suspended
N/A
Erase
Ready (error)
N/A
Erase Busy
Ready
Suspend
Lock/CR
Setup in
Erase
Suspend
Erase Suspended
N/A
Program in
Erase
Suspend
Setup
Program Busy in Erase Suspend
N/A
Busy
Program Busy in Erase Suspend
Erase
Suspended
Suspend
Program Suspend in Erase Suspend
N/A
Lock/CR Setup
in Erase Suspend
Erase Suspend (Lock error)
Erase Suspend
Erase Suspend (Lock
error)
N/A
EFP
Setup
Ready (error)
N/A
Busy
EFP Busy
(2)
EFP Verify
EFP Busy
(2)
N/A
Verify
EFP Verify
(2)
Ready
EFP Verify
(2)
Ready
QuadEFP
Setup
Quad EFP Busy
(2)
N/A
Busy
Quad EFP Busy
(2)
Ready
Quad EFP
Busy
(2)
Ready
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PDF描述 |
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| M58WR032FB70ZB6F | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6T | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6 | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6E | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6F | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR032FB70ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
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