參數(shù)資料
型號(hào): M58WR032FB70ZB6T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述: 32兆位(含2Mb × 16,多銀行,突發(fā))1.8V電源快閃記憶體
文件頁數(shù): 35/86頁
文件大小: 1306K
代理商: M58WR032FB70ZB6T
35/86
M58WR032FT, M58WR032FB
Table 13. Lock Status
Note: 1. The lock status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for a locked block) as read
in the Read Electronic Signature command with A1 = V
IH
and A0 = V
IL
.
2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WP status.
3. A WP transition to V
IH
on a locked block will restore the previous DQ0 value, giving a 111 or 110.
Current
Protection Status
(1)
(WP, DQ1, DQ0)
Next Protection Status
(1)
(WP, DQ1, DQ0)
Current State
Program/Erase
Allowed
After
Block Lock
Command
After
Block Unlock
Command
After Block
Lock-Down
Command
After
WP transition
1,0,0
yes
1,0,1
1,0,0
1,1,1
0,0,0
1,0,1
(2)
no
1,0,1
1,0,0
1,1,1
0,0,1
1,1,0
yes
1,1,1
1,1,0
1,1,1
0,1,1
1,1,1
no
1,1,1
1,1,0
1,1,1
0,1,1
0,0,0
yes
0,0,1
0,0,0
0,1,1
1,0,0
0,0,1
(2)
no
0,0,1
0,0,0
0,1,1
1,0,1
0,1,1
no
0,1,1
0,1,1
0,1,1
1,1,1 or 1,1,0
(3)
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M58WR032FB80ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory