參數(shù)資料
型號(hào): M58WR032FT
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述: 32兆位(含2Mb × 16,多銀行,突發(fā))1.8V電源快閃記憶體
文件頁(yè)數(shù): 39/86頁(yè)
文件大小: 1306K
代理商: M58WR032FT
39/86
M58WR032FT, M58WR032FB
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in
Table 16., Operating
and AC Measurement Conditions
. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Table 16. Operating and AC Measurement Conditions
Figure 8. AC Measurement I/O Waveform
Figure 9. AC Measurement Load Circuit
Table 17. Capacitance
Note: Sampled only, not 100% tested.
M58WR032FT, M58WR032FB
Parameter
60
70
80
Units
Min
Max
Min
Max
Min
Max
V
DD
Supply Voltage
1.7
2
1.7
2
1.7
2
V
V
DDQ
Supply Voltage
1.7
2.24
1.7
2.24
1.7
2.24
V
V
PP
Supply Voltage (Factory environment)
11.4
12.6
11.4
12.6
11.4
12.6
V
V
PP
Supply Voltage (Application environment)
-0.4
V
DDQ
+0.4
-0.4
V
DDQ
+0.4
-0.4
V
DDQ
+0.4
V
Ambient Operating Temperature
– 40
85
– 40
85
– 40
85
°C
Load Capacitance (C
L
)
30
30
30
pF
Input Rise and Fall Times
5
5
5
ns
Input Pulse Voltages
0 to V
DDQ
0 to V
DDQ
0 to V
DDQ
V
Input and Output Timing Ref. Voltages
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
AI06161
VDDQ
0V
VDDQ/2
AI06162
VDDQ
CL
CL includes JIG capacitance
16.7k
DEVICE
UNDER
TEST
0.1μF
VDD
0.1μF
VDDQ
16.7k
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
8
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
12
pF
相關(guān)PDF資料
PDF描述
M58WR032FT60ZB6 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT80ZB6E 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT80ZB6F 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT80ZB6T 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB60ZB6 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR032FT60ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT70ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory