參數資料
型號： M59DR008E100N1T
廠商： 意法半導體
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
中文描述： 8兆位512KB的x16插槽，雙行，第低壓閃存
文件頁數： 19/37頁
文件大小： 267K
代理商： M59DR008E100N1T
19/37
M59DR008E, M59DR008F
Table 22. DC Characteristics
(TA = 0 to 70°C or –40 to 85°C; V
DD
= V
DDQ
= 1.65V to 2.2V)
Symbol
Parameter
I
LI
Input Leakage Current
I
LO
Output Leakage Current
Supply Current
(Read Mode)
Supply Current
(Power Down)
I
CC3
Supply Current (Standby)
Supply Current
(Program or Erase)
Note: 1. Sampled only, not 100% tested.
2. V
PP
may be connected to 12V power supply for a total of less than 100 hrs.
3. For standard program/erase operation V
PP
is don’t care.
Test Condition
0V
≤
V
IN
≤
V
DD
0V
≤
V
OUT
≤
V
DD
Min
Typ
Max
±1
±5
Unit
μA
μA
I
CC1
E = V
IL
, G = V
IH
, f = 6MHz
10
20
mA
I
CC2
RP = V
SS
± 0.2V
2
10
μA
E = V
DD
± 0.2V
Word Program, Block Erase
in progress
Program/Erase in progress
in one Bank, Read in the
other Bank
15
50
μA
I
CC4
(1)
10
20
mA
I
CC5 (1)
Supply Current
(Dual Bank)
20
40
mA
I
PP1
V
PP
Supply Current
(Program or Erase)
V
PP
= 12V ± 0.6V
5
10
mA
I
PP2
V
PP
Supply Current
(Standby or Read)
V
PP
≤
V
CC
V
PP
= 12V ± 0.6V
0.2
100
5
μA
μA
V
V
V
400
0.4
V
IL
V
IH
V
OL
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
CMOS
–0.5
V
DDQ
–0.4
V
DDQ
+ 0.4
0.1
I
OL
= 100μA
V
OH
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP (2,3)
V
PP
Supply Voltage
(Program or Erase)
–0.4
11.4
V
DD
+ 0.4
12.6
V
V
Double Word Program
相關PDF資料
PDF描述
M59DR008E100N6T Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
M59DR008E100ZB1T 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100ZB6T 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008EZB 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
相關代理商/技術參數
參數描述
M59DR008E100N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100ZB1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E100ZB6T 功能描述:閃存 8M (512Kx16) 100ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M59DR008E120N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E120N6T 功能描述:閃存 8M (512Kx16) 120ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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