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參數(shù)資料
| 型號： | M59DR016D120ZB1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| 中文描述： | 16兆1兆x16插槽，雙行，頁1.8V電源閃存 |
| 文件頁數(shù)： | 18/37頁 |
| 文件大?。?/td> | 240K |
| 代理商： | M59DR016D120ZB1T |
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M59DR016C, M59DR016D
18/37
Table 21. Device Geometry Definition
Offset Word
Mode
Data
Description
27h
0015h
Device Size = 2
n
in number of bytes
28h
29h
2Ah
2Bh
2Ch
0001h
0000h
0000h
0000h
0002h
Flash Device Interface Code description: Asynchronous x16
Maximum number of bytes in multi-byte program or page = 2
n
Number of Erase Block Regions within device
bit 7 to 0 = x = number of Erase Block Regions
Note:1. x = 0 means no erase blocking, i.e. the device erases at once in "bulk."
2. x specifies the number of regions within the device containing one or more con-
tiguous Erase Blocks of the same size. For example, a 128KB device (1Mb)
having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is considered
to have 5 Erase Block Regions. Even though two regions both contain 16KB
blocks, the fact that they are not contiguous means they are separate Erase
Block Regions.
3. By definition, symmetrically block devices have only one blocking region.
M59DR016C Erase Block Region Information
001Eh
0000h
0000h
0001h
0007h
0000h
0020h
0000h
M59DR016D
0007h
0000h
0020h
0000h
001Eh
0000h
0000h
0001h
M59DR016C
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
M59DR016D
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes in
size. The value z = 0 is used for 128 byte block size.
e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K
bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase
Block Region:
e.g. y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]
y = 0 means no blocking (# blocks = y+1 = "1 block")
Note: y = 0 value must be used with number of block regions of one as indicated
by (x) = 0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR016D120ZB6T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016CZB | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016-ZBT | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR032B | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100N1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR016D120ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016DZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR016EC85ZB6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M59DR016-ZBT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| M59DR032A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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