參數(shù)資料
型號(hào)： M59DR016D120ZB6T
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
中文描述： 16兆1兆x16插槽，雙行，頁(yè)1.8V電源閃存
文件頁(yè)數(shù)： 11/37頁(yè)
文件大小： 240K
代理商： M59DR016D120ZB6T
11/37
M59DR016C, M59DR016D
Table 14. Instructions
(1,2)
Mne.
Instr.
Cyc.
1st Cyc.
2nd Cyc.
3rd Cyc.
4th Cyc.
5th Cyc.
6th Cyc.
RD
(4)
Read/Reset
Memory Array
1+
Addr.
(3)
X
Read Memory Array until a new write cycle is initiated.
Data
F0h
3+
Addr.
555h
2AAh
555h
Read Memory Array until a new
write cycle is initiated.
Data
AAh
55h
F0h
RCFI
CFI Query
1+
Addr.
55h
Read CFI data until a new write cycle is initiated.
Data
98h
AS
(4)
Auto Select
3+
Addr.
555h
2AAh
555h
Read electronic Signature or
Block Protection or Configuration
Register Status until a new cycle
is initiated.
Data
AAh
55h
90h
CR
Configuration
Register Write
4
Addr.
555h
2AAh
555h
Configura-
tion Data
Data
AAh
55h
60h
03h
PG
Program
4
Addr.
555h
2AAh
555h
Program
Address
Read Data Polling or
Toggle Bit until
Program completes.
Data
AAh
55h
A0h
Program
Data
DPG
Double Word
Program
5
Addr.
555h
2AAh
555h
Program
Address 1
Program
Address 2
Note 6, 7
Data
AAh
55h
40h
Program
Data 1
Program
Data 2
EBY
Enter Bypass
Mode
3
Addr.
555h
2AAh
555h
Data
AAh
55h
20h
XBY
Exit Bypass
Mode
2
Addr.
X
X
Data
90h
00h
PGBY
Program in
Bypass Mode
2
Addr.
X
Program
Address
Read Data Polling or Toggle Bit until Program
completes.
Data
A0h
Program
Data
DPGBY
Double Word
Program in
Bypass Mode
3
Addr.
X
Program
Address 1
Program
Address 2
Note 6, 7
Data
40h
Program
Data 1
Program
Data 2
BP
Block Protect
4
Addr.
555h
2AAh
555h
Block
Address
Data
AAh
55h
60h
01h
BU
Block Unprotect
1
Addr.
555h
2AAh
555h
Block
Address
Data
AAh
55h
60h
D0h
相關(guān)PDF資料
PDF描述
M59DR016CZB 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016-ZBT 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR032B 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032B100N1T 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M59DR016DZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR016EC85ZB6T 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M59DR016-ZBT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
M59DR032A 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032A100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
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