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參數(shù)資料
| 型號： | M59DR032B100N6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，第低壓閃存 |
| 文件頁數(shù)： | 1/38頁 |
| 文件大小： | 270K |
| 代理商： | M59DR032B100N6T |
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PRELIMINARY DATA
October 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M59DR032A
M59DR032B
32 Mbit (2Mb x16, Dual Bank, Page) Low Voltage Flash Memory
I
SUPPLY VOLTAGE
– V
DD
= V
DDQ
= 1.65V to 2.2V: for Program,
Erase and Read
– V
PP
= 12V: optional Supply Voltage for fast
Program and Erase
I
ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 words
– Page Access: 35ns
– Random Access: 100ns
I
PROGRAMMING TIME
– 10μs by Word typical
– Double Word Programming Option
I
MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit - 28 Mbit
– Parameter Blocks (Top or Bottom location)
– Main Blocks
I
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
I
BLOCK PROTECTION/UNPROTECTION
– All Blocks protected at Power Up
– Any combination of Blocks can be protected
– WP for Block Locking
I
COMMON FLASH INTERFACE (CFI)
I
64 bit SECURITY CODE
I
ERASE SUSPEND and RESUME MODES
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M59DR032A: A0h
– Device Code, M59DR032B: A1h
BGA
TSOP48 (N)
12 x 20mm
FBGA48 (ZB)
8 x 6 solder balls
Figure 1. Logic Diagram
AI02544B
21
A0-A20
W
DQ0-DQ15
VDD
M59DR032A
M59DR032B
E
VSS
16
G
RP
WP
VDDQVPP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M59DR032B100ZB1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B120N1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B120N6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B120ZB1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M59DR032B100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B120N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B120N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032B120ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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