參數(shù)資料
型號(hào)： M5M29FT800RV-12
廠商： Mitsubishi Electric Corporation
英文描述： 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
中文描述： 8,388,608位（1048,576 - 576 - Word的8位/ 524,288字BY16位）的CMOS 3.3只，塊擦除閃存
文件頁數(shù)： 7/14頁
文件大?。?/td> 151K
代理商： M5M29FT800RV-12
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
May 1997 , Rev.6.1
7
Read-Only Mode
AC ELECTRICAL CHARACTERISTICS
(Ta = 0 ~70°C, Vcc = 3.3±0.3V)
Write Mode
(/WE control)
AC ELECTRICAL CHARACTERISTICS
(Ta = 0 ~ 70°C, Vcc = 3.3V±0.3V)
Symbol
Parameter
Unit
Max
Min
120
Max
Min
100
Limits
M5M29FB/T800-10
Typ
M5M29FB/T800-12
Typ
Timing measurements are made under AC waveforms for read operations.
Read timing parameters during command write operations mode are the same as during read-only operations mode.
Typical values at Vcc=3.3V, Ta=25°C
Max
Min
80
M5M29FB/T800-80
Typ
t
a (AD)
t
a (CE)
t
a (OE)
Address access time
Chip enable access time
Output enable access time
ns
ns
ns
100
100
50
120
120
60
t
AVQV
t
ELQV
t
GLQV
80
80
40
t
CLZ
t
DF(CE)
t
OLZ
t
DF(OE)
t
PHZ
Chip enable to output in low-Z
Chip enable high to output in high Z
Output enable to output in low-Z
Output enable high to output in high Z
/RP low to output high-Z
ns
ns
ns
ns
ns
0
0
t
ELQX
t
EHQZ
t
GLQX
t
GHQZ
t
PLQZ
0
25
30
25
t
RC
Read cycle time
ns
t
AVAV
/BYTE low to output high-Z
Output hold from /CE, /OE, addresses
ns
ns
30
25
t
BHZ
t
OH
t
FLQZ
t
OH
25
t
WHGL
/OE hold from /WE high
t
OEH
/CE low to /BYTE high or low
Address to /BYTE high or low
t
BCD
t
BAD
ns
ns
5
5
5
5
t
ELFL/H
t
AVFL/H
5
5
ns
ns
100
500
120
500
80
500
0
0
0
/BYTE access time
ns
120
100
t
a(BYTE)
80
t
FL/HQV
0
0
0
25
150
30
300
25
150
/RP recovery to /CE low
t
PS
t
PHEL
Symbol
Parameter
Unit
Max
Min
120
50
10
Max
Min
100
50
10
Limits
M5M29FB/T800-10
Typ
M5M29FB/T800-12
Typ
Max
Min
80
50
M5M29FB/T800-80
Typ
t
WC
t
AS
t
AVAV
t
AVWH
Write cycle time
Address set-up time
ns
ns
t
DH
t
CS
t
WHDX
t
ELWL
Data hold time
Chip enable set-up time
ns
ns
t
DS
t
DVWH
Data set-up time
ns
50
10
50
10
50
10
t
AH
t
WHAX
Address hold time
ns
10
t
WP
t
WPH
t
BS
t
BH
t
WLWH
t
WHWL
t
FL/HWH
t
WHFL/H
Write pulse width
Write pulse width high
Byte enable high or low set-up time
Byte enable high or low hold time
ns
ns
ns
ns
60
20
50
100
60
20
50
120
60
20
50
80
t
CH
t
WHEH
Chip enable hold time
ns
0
0
0
0
0
0
t
PS
t
PHWL
/RP high recovery to write enable low
ns
500
500
500
t
BLS
t
WPS
t
BLH
t
WPH
Block Lockhold from valid SRD
ns
0
0
t
QVPH
0
t
WHRL
t
WHRL
Write enable high to RY/BY low
ns
100
120
80
t
DAP
t
DAE
t
WHRH1
t
WHRH2
Duration of auto-program operation
Duration of auto-block erase operation
ms
ms
7.5
50
120
600
120
600
7.5
50
7.5
50
120
600
Block Lock set-up to write enable high
ns
100
120
t
PHHWH
80
相關(guān)PDF資料
PDF描述
M5M29FB800RV-80 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FT800RV-80 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FT800FP 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FT800VP 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB161BWG 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M29FT800RV-80 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FT800VP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FT800VP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FT800VP-12 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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