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參數(shù)資料
| 型號： | M5M29GB640C3TXAI-90 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 3.3V ONLY FLASHMEMORY |
| 中文描述： | 3.3只FLASHMEMORY |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 635K |
| 代理商： | M5M29GB640C3TXAI-90 |
2
P/N:PM0900
M5M29GB640VP
REV. 0.3, NOV. 21, 2002
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The
M5M29GB640VP
uses a 2.7V~3.6V VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
A Command User Interface (CUI) serves as the inter-
face between the system processor and internal opera-
tion of the device. A valid command sequence written to
the CUI initiates device automation. An internal Write
State Machine (WSM) automatically executes the algo-
rithms and timings necessary for erase, full chip erase,
word/byte write and sector lock/unlock configuration op-
erations.
A sector erase operation erases one of the device's 32K-
word sectors typically within 1.0s, 4K-word sectors typi-
cally within 0.5s independent of other sectors. Each sec-
tor can be independently erased minimum 100,000 times.
Sector erase suspend mode allows system software to
suspend sector erase to read or write data from any other
sector.
Writing memory data is performed in word increments of
the device's 32K-word sectors typically within 0.8s and
4K-word sectors typically within 0.1s. Word program sus-
pend mode enables the system to read data or execute
code from any other memory array location.
M5M29GB640VP
features with individual sectors lock-
ing by using a combination of bits thirty-nine sector lock-
bits and WP, to lock and unlock sectors.
The status register indicates when the WSM's sector
erase, full chip erase, word program or lock configura-
tion operation is done.
The access time is 90/120ns (tELQV) over the operat-
ing temperature range (-40
°
C to +80
°
C) and VCC supply
voltage range of 2.7V~3.6V.
M5M29GB640VP'
s power saving mode feature substan-
tially reduces active current when the device is in static
mode (addresses not switching). In this mode, the typi-
cal ICCS current is 7uA (CMOS) at 3.0V VCC.
As CE and RP are at VCC, ICC CMOS standby mode is
enabled. When RP is at GND, the reset mode is enabled
which minimize power consumption and provide data
write protection.
A reset time (tPHQV) is required from RP switching high
until outputs are valid. Similarly, the device has a wake
time (tPHEL) from RP-high until writes to the CUI are
recognized. With RP at GND, the WSM is reset and the
status register is cleared.
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PDF描述 |
|---|---|
| M5M29GB640VP | 3.3V ONLY FLASHMEMORY |
| M5M29GB640C3BTC-90 | 3.3V ONLY FLASHMEMORY |
| M5M29GB640C3BTI-12 | 3.3V ONLY FLASHMEMORY |
| M5M29GB640C3BTI-90 | 3.3V ONLY FLASHMEMORY |
| M5M29GB640C3BXAC-12 | 3.3V ONLY FLASHMEMORY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29GB640VP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.3V ONLY FLASHMEMORY |
| M5M29GT160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GT160BVP-80 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GT160BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GT161BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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