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參數(shù)資料
| 型號： | M5M4V64S20ATP-8L |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM |
| 中文描述： | 64M號（4銀行甲4194304字× 4位）同步DRAM |
| 文件頁數(shù)： | 3/48頁 |
| 文件大小： | 1097K |
| 代理商： | M5M4V64S20ATP-8L |
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M5M4V64S20ATP-8, -10, -12
Jan'97
Preliminary
MITSUBISHI LSIs
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
MITSUBISHI ELECTRIC
SDRAM (Rev.0.2)
PIN FUNCTION
CLK
Input
Master Clock: All other inputs are referenced to the rising edge of CLK.
CKE
Input
Clock Enable: CKE controls internal clock. When CKE is low, internal clock
for the following cycle is ceased. CKE is also used to select auto / self
refresh. After self refresh mode is started, CKE becomes asynchronous
input. Self refresh is maintained as long as CKE is low.
/CS
Input
Chip Select: When /CS is high, any command means No Operation.
/RAS, /CAS, /WE
Input
Combination of /RAS, /CAS, /WE defines basic commands.
A0-11
Input
A0-11 specify the Row / Column Address in conjunction with BA0,1. The
Row Address is specified by A0-11. The Column Address is specified by
A0-9 (x4), A0-8 (x8). A10 is also used to indicate precharge option. When
A10 is high at a read / write command, an auto precharge is performed.
When A10 is high at a precharge command, all banks are precharged.
BA0,1
Input
Bank Address: BA0,1 specifies one of four banks to which a command is
applied. BA0,1 must be set with ACT, PRE, READ, WRITE commands.
DQ0-7 (0-3)
Input / Output
Data In and Data out are referenced to the rising edge of CLK.
DQM
Input
Din Mask / Output Disable: When DQM is high in burst write, Din for the
current cycle is masked. When DQM is high in burst read, Dout is disabled
at the next but one cycle.
Vdd, Vss
Power Supply
Power Supply for the memory array and peripheral circuitry.
VddQ, VssQ
Power Supply
VddQ and VssQ are supplied to the Output Buffers only.
3
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M5M4V64S30ATP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
| M5M4V64S30ATP-10L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
| M5M4V64S30ATP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
| M5M4V64S30ATP-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
| M5M4V64S30ATP-8A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM |
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